A new cascadable CMOS based voltage squarer circuit having voltage input/current output and its analog four-quadrant multiplier application are presented. The proposed structure has high input impedance and high output impedance; thus, it can be easily connected to other circuits without requiring any extra buffers. Moreover, its two symmetrical bias voltages have high input impedances; accordi...

In this work, we investigated the effects of quantum dot (QD) annealing (as-grown, 600°C-annealed, and 750°C-annealed) on the preliminary performances of 1.3-μm InAs-InGaAs-GaAs quantum dot electroabsorption modulators (QD-EAMs). Both extinction ratio and insertion loss were found to vary inversely with the annealing temperature. Most importantly, the 3-dB response of the 750°C-annealed lumped-...

We have measured with a tunnel probe the energy distribution function of Landau quasiparticles in metallic diffusive wires connected to two reservoir electrodes, with an applied bias voltage. The distribution function in the middle of a 1.5-mm-long wire resembles the half sum of the Fermi distributions of the reservoirs. The distribution functions in 5-mm-long wires are more rounded, due to int...

We study the differential conductance, spectral density and magnetization, for a quantum dot coupled to two conducting leads as a function of bias voltage Vds, magnetic field B and temperature T . The system is modeled with the Anderson model solved using a spin dependent interpolative perturbative approximation in the Coulomb repulsion U that conserves the current. For large enough magnetic fi...

0026-2714/$ see front matter 2011 Elsevier Ltd. A doi:10.1016/j.microrel.2011.09.018 ⇑ Corresponding author. E-mail address: [email protected] (E.A. Douglas). AlGaN/GaN High Electron Mobility Transistors were found to exhibit a negative temperature dependence of the critical voltage (VCRI) for irreversible device degradation to occur during bias-stressing. At elevated temperatures, devices exhib...

In a radio-frequency-powered glow discharge lamp, a d.c. bias current which is driven by a self-bias voltage can lead to an enhancement of the emission intensities excited by the plasma. The driving frequency of the r.f. plasma is an important parameter to determine the self-bias voltage; lower r.f. frequencies induce greater self-bias voltages. The effects of the bias current introduction on t...

We investigate the effect of internal electric field in InGaN well layer of InGaN/GaN multiple quantum well light-emitting diodes (LEDs) on efficiency droop behavior. The simulation results show that the internal electric field in InGaN well layers of Ga-polar LEDs is same as the direction of external electric field by forward bias voltage, resulting in a strong efficiency droop. However, N-pol...

This paper presents a new circuit topology designed to minimise the weight of the control circuit required to actuate multiple piezoelectric actuators. It can independently set the phase and bias voltage on each piezoelectric actuator through the use of a single inductor. This is highly desirable in weight constrained applications such as unmanned aerial vehicles as the ferroelectric material r...

The electrical characteristics and stabilities of dual-gate (DG) coplanar homojunction amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs) are described. When the gate voltage is applied on top and bottom electrodes, the DG a-IGZO TFT showed an excellent electrical performance with the subthreshold swing of 99 mV/dec, the mobility of 15.1 cm/V·s and the on-off ratio of 10. U...

We present an overview of improvements in detection limit and responsivity of our biomimetic hair flow sensors by electrostatic spring-softening (ESS). Applying a DCbias voltage to our capacitive flow sensors improves the responsively by up to 80% for flow signals at frequencies below the sensor’s resonance. Application of frequency matched AC-bias voltages allows for tunable filtering and sele...