We reexamine the tunneling data on A15 superconductors by performing a generalized McMillan-Rowell tunneling inversion that incorporates a nonconstant electronic density of states obtained from band-structure calculations. For Nb3Sn, we find that the fit to the experimental data can be slightly improved by taking into account the sharp structure in the density of states, but it is likely that s...

We report a large tunneling anisotropic magnetoresistance (TAMR) in (Ga,Mn)As lateral nanoconstrictions. Unlike previously reported tunneling magnetoresistance effects in nanocontacts, the TAMR does not require noncollinear magnetization on either side of the constriction. The nature of the effect is established by a direct comparison of its phenomenology with that of normal anisotropic magneto...

Simulation studies of carbon nanotube field-effect transistors (CNFETs) are presented using models of increasing rigour and versatility that have been systematically developed. Firstly, it is demonstrated how one may compute the standard tight-binding band structure. From this foundation, a self-consistent solution for computing the equilibrium energy band diagram of devices with Schottkybarrie...

abstract a 2.5 year old girl is presented with both hands constriction bands leading to distal amputations and the rare deformity of shoulder duplication in the right side accompanying constriction skin marking over the affected shoulder. the cephalomedial scapula articulated with the clavicle and the caudolateral scapula articulated with humeral head. the most important physical finding which ...

We have obtained empirical pseudopotential parameters for α-Sn and employed the pseudopotential method along with the virtual crystal approximation to model GeSn and SiGeSn alloys. The calculated direct and indirect band gaps of GeSn and SiGeSn show good agreement with experimental data at 300K available till date. The derived pseudopotential parameter set was used to extract various band struc...

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High-frequency (optical) and low-frequency (static) dielectric constant versus band gap trends, as well as index of refraction versus band gap trends are plotted for 107 inorganic semiconductors and insulators. These plots are describable via power-law fitting. Dielectric screening trends that emerge from this analysis have important optical and electronic implications. For example, barrier low...

The Photoexcited carrier lifetime (τ) and peak to valley transmission difference (ΔTp-v) in direct and indirect band gap crystals has been investigated by the use of single beam open and closed aperture z-scan technique using frequency doubled Nd:YAG laser. The peak to valley transmission difference (ΔTp-v) is found to be of the order of 10-2 in case of direct band gap crystals and of the order...

How do the electronic properties of a metal atom change when clusters of different sizes and geometry are formed? Nilius et al. (p. 1853) used scanning tunneling microscopy (STM) to build gold chains with defined numbers of atoms on a nickel-aluminum alloy surface. They then used the STM to perform scanning tunneling spectroscopy on these structures. Conductivity spectra taken at 30 points alon...

A number of vibrational-tunneling-rotational (VTR) transitions in the range of 195-298 GHz belonging to theΣ00 → Π10 hindered rotation band in Rg·ND3 (Rg = Ne, Kr) complexes are observed in absorption in a free supersonic jet, using the pulsed fast scan submillimeter wave spectroscopic technique (FASSST). The data obtained in this experiment, combined with previously obtained data on the Ar·ND3...