Based on the ballistic nature of electron transport, exploitable nonlinear transport phenomena are predicted for three-terminal ballistic junctions ~TBJs!. For a symmetric TBJ, it is shown that when finite voltages Vl and Vr are applied in push-pull fashion, with Vl5V and Vr52V , to the left and right branches, the voltage output Vc from the central branch will always be negative. This characte...

We theoretically study the magnetoresistance of single wall carbon nanotubes (SWCNTs) in the ballistic transport regime, using a standard tight-binding approach. The main attention is directed to spin-polarized electrical transport in the presence of either axial or perpendicular magnetic field. The method takes into account both Zeeman splitting as well as size and chirality effects. These fac...

Full–band Monte Carlo simulations are performed for n–type FinFETs as well as for unstrained–Si and strained–Si fully–depleted (FD) SOI–MOSFETs. Gate lengths of 50 nm down to 10 nm are considered, and a fixed off–current of 100 nA/μm is in each case ensured by adjusting the silicon film thickness. The FinFET shows the best scaling trend, but the strained–Si FDSOI–MOSFET always involves the larg...

The ballistic performance of electron transport in nanowire transistors is examined using a 10 orbital sp3d5s* atomistic tight-binding model for the description of the electronic structure, and the top-of-the-barrier semiclassical ballistic model for calculation of the transport properties of the transistors. The dispersion is self consistently computed with a 2D Poisson solution for the electr...

We report on the magnetoresistance characteristics of one-dimensional electrons confined in a single InAs quantum well sandwiched between AlSb barriers. As a result of a nanofabrication scheme that utilizes a 3-nm-shallow wet chemical etching to define the electrostatic lateral confinement, the system is found to possess three important properties: specular boundary scattering, a strong lateral...

We consider the angular averaging of solutions to time-harmonic transport equations. Such quantities model measurements obtained for instance in optical tomography, a medical imaging technique, with frequency-modulated sources. Frequency modulated sources are useful to separate ballistic photons from photons that undergo scattering with the underlying medium. This paper presents a precise asymp...

Radiative transfer (RT) theory is often invoked to describe energy propagation in strongly scattering media. Fitting RT to measured wave field intensities is rather different at late times, when the transport is diffusive, than at intermediate times (around one extinction mean free time), when ballistic and diffusive behavior coexist. While there are many examples of late-time RT fits, we descr...

We have used ballistic electron magnetic microscopy to image, with nanometer resolution, the magnetization behavior of Co/Cu/Co trilayer films in the presence of a magnetic field. Films prepared both by thermal evaporation and by magnetron sputtering have been studied. In each case we have observed both large, ;500 nm, domain structures, and much smaller, apparently randomly dispersed, regions ...

A theory of spin-polarized electron transport in ferromagnet-semiconductor heterostruc-tures, based on a unified semiclassical description of ballistic and diffusive transport in semiconductors, is outlined. The aim is to provide a framework for studying the interplay of spin relaxation and transport mechanism in spintronic devices. Transport inside the (nondegenerate) semiconductor is describe...