In this paper, high-uniformity 2×64 silicon avalanche photodiode (APD) arrays are reported. Silicon multiple epitaxy technology was used, and the high performance APD based on double-layer epiwafers achieved for first time, to best of our knowledge. A breakdown voltage with a fluctuation smaller than 3.5 V is obtained fabricated arrays. The dark currents below 90 pA all 128 pixels at unity gain...

Laser-based remote sensing is undergoing a remarkable advance due to novel technologies developed at MIT Lincoln Laboratory. We have conducted recent experiments that have demonstrated the utility of detecting and imaging low-density aerosol clouds. The Mobile Active Imaging LIDAR (MAIL) system uses a Lincoln Laboratory-developed microchip laser to transmit short pulses at 14-16 kHz Pulse Repet...

We demonstrate balanced InGaAs/InP single photon avalanche diodes (SPADs) operated in both pulse-gated mode and sinusoidal gating mode for data transmission rate up to 20 MHz. The photodiode pair is biased in a balanced configuration with only one of the SPADs illuminated. The common-mode signal cancellation realized with the balanced configuration enables detection of small avalanche pulses. A...

This work presents a monolithic laterally-coupled wide-spectrum (350 nm < λ < 1270 nm) optical link in a silicon-on-insulator CMOS technology. The link consists of a silicon (Si) light-emitting diode (LED) as the optical source and a Si photodiode (PD) as the detector; both realized by vertical abrupt n+p junctions, separated by a shallow trench isolation composed of silicon dioxide....