Amorphous arsenic sulphide As2S3 films prepared by ultrafast pulsed laser deposition have been vacuum annealed at a range of different temperatures. Measurements of the glass transition temperature indicate that a crystallization process initiates at annealing temperatures around 170 °C. In combination with Raman scattering analysis, we conclude that phase separation is intrinsic for our as-dep...

We report on the stability of sputter-deposited tungsten silicide (WSi2.6) films that were implanted with boron or phosphorus and annealed at high temperatures using rapid thermal annealing. Depending on process conditions, some films were found to be unstable, resulting in peeling and lifting from the substrate. The regime of stability was experimentally determined and found to be a function o...

A lithography-free method for fabricating the nanogrids and quasi-beehive nanostructures on Si substrates is developed. It combines sequential treatments of thermal annealing with reactive ion etching (RIE) on SiGe thin films grown on (100)-Si substrates. The SiGe thin films deposited by ultrahigh vacuum chemical vapor deposition form self-assembled nanoislands via the strain-induced surface ro...

Graphene decorated with 5d transitional metal atoms is predicted to exhibit many intriguing properties; for example iridium adatoms are proposed to induce a substantial topological gap in graphene. We extensively investigated the conductivity of single-layer graphene decorated with iridium deposited in ultra-high vacuum at low temperature (7 K) as a function of Ir concentration, carrier density...

Spun-cast hlms ot polystyiene (PS) blended with polylactide (PLA) weie visualized and chaiacten/ed using atomic foice micioscopy (AFM) and synchtoti on-based X-iay photoemission election micioscopy (X-PEEM) The composition ot the two polymets in these systems was deteimined by quantitative chemical analysis ot neat-edge X-tay absorption signals lecoided with X-PEEM The surface morphology depend...

Using a combination of scanning electron microscopy, transmission electron microscopy (TEM), X-ray diffraction and X-ray photoelectron spectroscopy (XPS), we made a comparative study of the high-temperature annealing impact on thin titanium deuteride (TiD(y)) films covered by an ultrathin Pd layer, and on Ti/Pd bilayer films. The bilayer films were prepared under ultrahigh vacuum conditions and...

Ge:Sb films with thickness (500nm) have been deposited by thermal evaporation technique on glass substrate and c-GaAs wafer at room temperature, under vacuum of 10-5 mbar with rate of deposition equal to 10Ǻ/sec. These films have been annealed at different annealing temperatures (100, 200) 0 C. The structural characteristic of the films prepared on glass and GaAs substrates have been studied by...

A large testing programme of a strip steel grade, microalloyed by vanadium, titanium and niobium, was conducted. The experiment was based on combination of cold rolling, recrystallization annealing, mechanical testing, metallographic examinations, SEM and TEM analyses. Samples in the form of stripes with dimensions of 3.9×25×500 mm were rolled in several passes with the total height reduction o...

We report Fe-related emission in ion-implanted ZnO single crystals. Iron ions were implanted at room temperature with 100 keV and a fluence of 1310 Fe/cm, and were submitted to annealing treatments in vacuum and in air. After implantation, the damage raises the minimum yield (xmin) from 2% to 50%. Annealing in an oxidizing atmosphere leads to a reduction of the implantation damage, which is ful...

SnS and Ag films were deposited on glass substrates by vacuum thermal evaporation technique successively, and then the films were annealed at different temperatures (0-300°C) in N2 atmosphere for 2h in order to obtain silver-doped SnS ( SnS:Ag ) films. The phases of SnS:Ag films were analyzed by X-ray diffraction (XRD) system, which indicated that the films were polycrystalline SnS with orthogo...