Ambipolar conduction in transistors using solution grown InAs nanowires with Cd doping " (2007).

Transport due to spin-helical massless Dirac fermion surface state is of paramount importance to realize various new physical phenomena in topological insulators, ranging from quantum anomalous Hall effect to Majorana fermions. However, one of the most important hallmarks of topological surface states, the Dirac linear band dispersion, has been difficult to reveal directly in transport measurem...

We investigate quantum dots in semiconductor PbTe nanowire devices. Due to the accessibility of ambipolar transport PbTe, can be occupied both with electrons and holes. Owing a very large dielectric constant order 1000, we do not observe Coulomb blockade which typically obfuscates orbital spin spectra. extract highly anisotropic effective Lande g-factors, range 20-44. The absence allows direct ...

The Hall effect arises in a plasma when electrons are able to drift with the magnetic field but ions cannot. In a fully-ionized plasma this occurs for frequencies between the ion and electron cyclotron frequencies because of the larger ion inertia. Typically this frequency range lies well above the frequencies of interest (such as the dynamical frequency of the system under consideration) and c...

High performance ambipolar silicon nanowire (SiNW) transistors were fabricated. SiNWs with uniform oxide sheath thicknesses of 6–7 nm were synthesized via a gas-flow-controlled thermal evaporation method. Field effect transistors (FETs) were fabricated using as-grown SiNWs. A two step annealing process was used to control contacts between SiNW and metal source and drain in order to enhance devi...