Dust grains, formed around asymptotic giant branch (AGB) stars, are accelerated by stellar radiation to drive stellar winds, which supply freshly synthesized nuclides to the Galaxy. Silicate is the dominant dust species in space, but ~40% of oxygen-rich AGB stars are thought to have comparable amounts of aluminum oxide dust. Dust formation and the wind-driving mechanism around these oxygen-rich...

Separation of carrier-free iodine from low-level iodine samples and accurate measurement of ultra-low-level (129)I in microgram iodine target are essential but a bottleneck in geology and environment research using naturally produced (129)I. This article presents a detection technique of accelerator mass spectrometry (AMS) for accurate determination of ultra-low-level (129)I in carrier-free AgI...

Amorphous Si nanowires have been directly synthesized by a thermal processing of Si substrates. This method involves the deposition of an anodic aluminum oxide mask on a crystalline Si (100) substrate. Fe, Au, and Pt thin films with thicknesses of ca. 30 nm deposited on the anodic aluminum oxide-Si substrates have been used as catalysts. During the thermal treatment of the samples, thin films o...

″Ultrathin″ metallization layers on the order of nanometers in thickness are increasingly used in semiconductor interconnects and other nanostructures. Aqueous deposition methods are attractive methods to produce such layers due to their low cost, but formation of ultrathin layers has proven challenging, particularly on oxide-coated substrates. This work focused on the formation of thin copper ...

in this study, aluminium2024- graphite composites containing 5, 10, 15 and 20 weight percent of graphite were produced by solid assisted melt disintegration (samd) technique which resulted in production of al/gr powder mixtures which subsequently consolidated and sintered for preparation of al/gr composites. in this technique, powder mixture was prepared by addition of flake graphite (mean diam...

We report a successful application of atomic layer deposition (ALD) aluminum oxide as a passivation layer to gallium nitride high electron-mobility transistors (HEMTs). This new passivation process results in 8%–10% higher dc maximum drain current and maximum extrinsic transconductance, about one order of magnitude lower drain current in the subthreshold region, 10%–20% higher pulsed-I V drain ...