We study the concept of double-heterostructure quantum well (DHQW) InAlN/GaN/AlGaN high electron mobility transistor (HEMT) for higher device robustness and less degradation. Physics-based device simulation proves that the back barrier blocks the carrier injection into the device buffer. However, the energy of the injected electrons in the buffer is higher for any quantum well design in InAlN/G...

AlN/GaN single heterojunction MOS-HEMTs grown by molecular beam epitaxy have been fabricated utilising HfO2 high-K dielectrics deposited by atomic layer deposition. Typical DC transfer characteristics of 1.3 mm gate length devices show a maximum drain current of 950 mA/mm and a transconductance of 210 mS/mm with gate currents of 5 mA/mm in pinch-off. Unity gain cutoff frequencies, ft and fmax, ...

This work shows results of dynamic lumpedelement (LE) thermal modeling of power AlGaN/GaN HEMTs. A realistic 3D structure including top-side metals, GaN-Si thermal boundary resistance, die-attach, and source via hole is modeled using a finite-element (FE) tool, and the results are used to develop simplified LE dynamic thermal models. We show that the LE models can match the FE data with excelle...

This paper deals with the physical study of the Schottky contact after pulsed-RF saturated life test under enhanced drain bias voltage on power HEMTs. Electrical measurements showed a pinch-off voltage (VP) shift, a decrease of output power and average drain current while Photon Emission Microscopy (PEM) was used to identify the degradation distribution along the 80 fingers die. Finally, Transm...

This paper presents a systematic analysis of the two kinds of traps encountered in AlGaN/GaN HEMTs. It is shown that passivation is very efficient to minimize the surface trap effects but has little effect on the buffer traps. Those ones can only be eliminated through the development of high purity substrates. Moreover thermal I-V and microwave behaviour of such transmissions is investigated th...

Due to the wide band gap energy and high breakdown electric field of GaN, heterostructure transistors made from it are promising candidates for high power and high frequency applications. However, one issue that prevents the wide deployment of GaN HEMTs is their reliability. Research has been actively trying to improve the reliability of these devices. In spite of this, detailed understanding o...

GaN high electron mobility transistors (HEMTs) have shown the potential to be extremely tolerant of the space radiation environment. AlGaN/GaN HEMT structures on three different substrates were exposed to proton irradiation at fluences up to 6x10 14 cm -2 , which resulted in a 30% reduction in mobility and saturation current density. Dynamic ON-resistance measurements demonstrated increased deg...

Fig. 1. Cross-section of self-aligned base-emitter junction from Teledyne 500nm HBT process [6] InP-based transistor technologies, both high electron mobility transistors (HEMTs) and double heterojunction bipolar transistors (DHBTs), have demonstrated the highest reported transistor RF figures-of-merit. Both device technologies have been reported with current gain cutoff frequencies (ft) in exc...

In this work, we propose a simple and yet accurate physical model to describe the figures-of-merit (FOMs) of lateral GaN power devices. While performance limit vertical devices is well understood, FOMs are not properly described by current models. This work investigates specific characteristics depletion in devices, particularly focusing on substantial potential Polarization Super Junctions (PS...

In this paper, we report the effect of post-gate metallization annealing on performance GaN-based High Electron Mobility Transistors (HEMTs). The performances HEMTs annealed at 200 °C (HEMT1) and 400 (HEMT2) for 5 minutes in N2 ambient are compared. While there is a kink output characteristics HEMT1, no such HEMT2. attributed to impact ionization GaN channel. Surface interface traps HEMT1 incre...