A. OANCEA, B. HANOUNE, C. FOCSA, B. CHAZALLON, [email protected] 1 Laboratoire de Physique des Lasers, Atomes et Molécules (PhLAM), UMR CNRS 8523, Centre d’Etudes et de Recherches Lasers et Applications (CERLA, FR CNRS 2416), Université des Sciences et Technologies de Lille, 59655 Villeneuve d’Ascq , France 2 Physico-Chimie des Processus de Combustion et de l’Atmosphère (PC2A), U...

Investigations of perovskite-type BaCeO3 and SrCeO2 with various dopants (Y, Gd, Nd, and Ni) indicate that their microstructures and electrical properties are strongly influenced by the type and amount of dopants. Grain growth and densification of sintered samples are influenced by dopant level and A:B site nonstoichiometry. The conductivity of BaCe1_Y039 increases with the yttrium content in h...

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We have measured the thermoelectric power, S, and resistivity, ρ, of pure and Al-doped MgB2. S is positive and increases linearly with temperature above the superconducting transition temperature, Tc. Deviations from the linear dependence appear at higher temperature, T > T0 ≈ 160K. Tc and T0 both decrease with Al doping whereas the slope of S(T) in the linear range increases with the Al conten...

Novel magnetic hydrotalcite-like compounds (HTLcs) were synthesized through introducing magnetic substrates (Fe3O4) into the Co–Al HTLcs materials by hydrothermal method. The magnetic Co–Al HTLcs with different Fe3O4 contents were characterized in detail by XRD, FT-IR, SEM, TEM, DSC, and VSM techniques. It has been found that the magnetic substrates were incorporated with HTLcs successfully, al...

The microstructure and micro-composition of ZnO thin films doped with Al, deposited on Si/SiO2 substrates by sol-gel method were investigated by scanning and high resolution transmission electron microscopy and related energy dispersive X-ray analyses (SEM-EDX, STEM-HRTEM/EDX). Thin films of ZnO were prepared by deposition of 1-10 successive layers with 0.5 at.% and 5 at.% Al concentrations. Th...

Citation Guerrero, R. et al. "Conductance in Co/Al2O3/Si/Al2O3 permalloy with asymmetrically doped barrier. Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters.