نتایج جستجو برای: a al2o3

تعداد نتایج: 13438000  

2012
Navneet Singh

Our aim of is to develop a processing method for a rotating disc made of functionally graded materials (FGM), by stacking the slurry, layer by layer in a radial direction. A three-layer functionally graded material of Al/Al2O3 is fabricated with compositions of 10, 20, 30 vol.% Al2O3. The ceramic composition increases from the discs inner (centre) to the outer. The combination of these material...

Journal: :Nanotechnology 2013
Woojin Park Jin Ho Yang Chang Goo Kang Young Gon Lee Hyeon Jun Hwang Chunhum Cho Sung Kwan Lim Soo Cheol Kang Woong-Ki Hong Sang Kyung Lee Sangchul Lee Byoung Hun Lee

A new touch sensor device has been demonstrated with molybdenum disulfide (MoS2) field effect transistors stacked with a piezoelectric polymer, polyvinylidene fluoride-trifluoroethylene (PVDF-TrFE). The performance of two device stack structures, metal/PVDF-TrFE/MoS2 (MPM) and metal/PVDF-TrFE/Al2O3/MoS2 (MPAM), were compared as a function of the thickness of PVDF-TrFE and Al2O3. The sensitivity...

In the present study, Al5083- Al2O3 nanocomposite was successfully prepared by friction stir processing (FSP) with rotational speed of 710 rpm and travel speed of 14 mm/min. In order to improve distribution of Al2O3 particles, a net of holes were designed on the surface of Al5083 sheet. The samples were characterized by optical and scanning electron microscopy (SEM), microhardness, tensile and ...

Journal: :Scientific reports 2015
Bok Ki Min Seong K Kim Seong Jun Kim Sung Ho Kim Min-A Kang Chong-Yun Park Wooseok Song Sung Myung Jongsun Lim Ki-Seok An

Graphene heterostructures are of considerable interest as a new class of electronic devices with exceptional performance in a broad range of applications has been realized. Here, we propose a graphene-embedded Al2O3 gate dielectric with a relatively high dielectric constant of 15.5, which is about 2 times that of Al2O3, having a low leakage current with insertion of tri-layer graphene. In this ...

خیاطی, غلامرضا, ربیعی, سید محمود, رجبی, محمد, پزشکی, دیناه,

In this study, the effect of Al2O3 addition as a diluent during mechanically activated self-propagating high temperature synthesis (MASHS) of Al2O3-ZrB2 composite was investigated. For this purpose, the thermite mixture of Al, ZrO2, H3BO3 and different amounts of Al2O3 (0, 3, 6, 9 wt.%) were used as the raw materials and mechanically activated for 5 h, then furnace sintering was performed at 65...

2017
Yu Sang Aihua Xing Chuanfu Wang Zhihua Han Yulong Wu Cláudia Gomes Silva

Nanocrystal HZSM-5 zeolite aggregates with different SiO2/Al2O3 molar ratios were prepared under low temperature and were used to catalyze the conversion of methanol to propylene and butene. The coke location, coke content, and coke species deposited on HZSM-5 aggregates were investigated. The near-graphite carbon on the external surface of HZSM-5 zeolite (SiO2/Al2O3 molar ratio = 400) was dist...

2011
S. Zhang X. Y. Cao Y. M. Ma Y. C. Ke J. K. Zhang F. S. Wang

The influences of filler size and content on the properties (thermal conductivity, impact strength and tensile strength) of Al2O3/high density polyethylene (HDPE) composites are studied. Thermal conductivity and tensile strength of the composites increase with the decrease of particle size. The dependence of impact strength on the particle size is more complicated. The SEM micrographs of the fr...

Journal: :Physical review letters 2013
Kohei Shimamura Fuyuki Shimojo Rajiv K Kalia Aiichiro Nakano Priya Vashishta

Quantum molecular dynamics simulations of α-Al2O3(0001)/3C-SiC(111) interfaces reveal profound effects of thermal annealing for producing strong interfaces consisting solely of cation-anion bonds and their consequence on interfacial structures. A Si-terminated SiC surface and Al2O3 form a stronger interface (Si-interface) with a Si-O bond density of 12.2  nm(-2), whereas the C interface has an ...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه تربیت مدرس - دانشکده فنی مهندسی 1389

تحقیق حاضر سنتز پودر کامپوزیتی al2o3-tib2 به روش سل-ژل می باشد. مواد اولیه استفاده شده در این تحقیق آلکوکسید تیتانیم (تیتانیم ایزو پرپکساید)، اکسید بور (b2o3) و ایزوپروپانول و پودر آلومینیم است. ژل بدست آمده از ترکیب آلکوکسید تیتانیم و اکسید بور و ایزو پروپانول و آب مقطر، در دمای ?c 100 به مدت 15 ساعت قرار داده شد. سپس پودر خشک شده با پودر آلومینیم مخلوط شد و در کوره تیوبی جهت کلسینه کردن در...

2014
Emir Salih Magden Leslie A. Kolodziejski

A reliable and CMOS-compatible deposition process for amorphous Al2O3 based active photonic components has been developed. Al2O3 films were reactively sputtered, where process optimization was achieved at a temperature of 250 C, with a deposition rate of 8.5 nm/min. With a surface roughness of 0.3 nm over a 1 μm area, background optical losses as low as 0.1 dB/cm were obtained for undoped films...

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