The bias stability of zinc-tin-oxide ZTO thin-film transistors TFTs with either Al2O3 gate dielectrics deposited via atomic layer deposition ALD or SiO2 gate dielectrics deposited via plasma-enhanced chemical vapor deposition PECVD was compared. Both device types showed incremental mobility 11 cm2 /V s, subthreshold slopes 0.4 V /dec, and ION / IOFF ratios of 107. During repeated ID-VGS sweepin...

Based on Density Functional Theory – Generalized Gradient Approximation calculations (DFT-GGA), we provide a theoretical model for the H2 combustion on Al2O3 supported catalytically active Pt nanoclusters. In a previous paper (Synowczynski, 2008), we identified several adsorption and dissociation processes that occur on the Al2O3 support and demonstrated that products from these reactions can m...

The densification behavior and mechanical properties of B4C hot-pressed at 2000°C for 1 h with additions of Al2O3 up to 10 vol% were investigated. Sinterability was greatly improved by the addition of a small amount of Al2O3. The improvement was attributed to the enhanced mobility of elements through the Al2O3 near the melting temperature or a reaction product formed at the grain boundaries. As...

The capacitance and leakage current properties of multilayer La2O3/Al2O3 dielectric stacks and LaAlO3 dielectric film are investigated in this paper. A clear promotion of capacitance properties is observed for multilayer La2O3/Al2O3 stacks after post-deposition annealing (PDA) at 800 °C compared with PDA at 600 °C, which indicated the recombination of defects and dangling bonds performs better ...

Dispersed two-dimensional MoOx and VOx oligomers on Al2O3 and SnOx-modified Al2O3 supports were examined for selective dimethyl ether (DME) oxidation to HCHO and their structure and reduction rates in H2 were determined using Raman and X-ray near edge absorption spectroscopies (XANES), respectively. Modifying Al2O3 supports with SnOx or other reducible oxides (ZrOx, CeOx and FeOx) led to MoOx d...

Characterization was performed on the application of atomic layer deposition (ALD) of hafnium dioxide (HfO2) and aluminum oxide (Al2O3), and plasma-enhanced chemical vapor deposition (PECVD) of silicon nitride (Si3N4) as metal–insulator–metal (MIM) capacitor dielectric for GaAs heterojunction bipolar transistor (HBT) technology. The results show that the MIM capacitor with 62 nm of ALD HfO2 res...

This study focuses on interactions between nanoparticles and a pesticide. The aim was to investigate how nano-sized aluminum oxide (410 nm) can alter the toxic effects of thiacloprid, even if no sorption between particles and the insecticide takes place. Thus, our study investigated a rather unexplored interaction. We conducted our research with larvae of Chironomus riparius and used thiaclopri...

Purpose. Although several studies evaluating the mechanical properties of Ce-TZP/Al2O3 have been published, to date, no study has been published investigating the bonding protocol between Ce-TZP/Al2O3 and resin cement. The aim of this study was to evaluate the shear bond strength to air-abraded Ce-TZP/Al2O3 when primers and two different cement types were used. Materials and Methods. Two types ...