Multi-quantum well structures of 3C/4H-SiC polytypes grown either on stepped or on on-axis hexagonal SiC by molecular beam epitaxy have been investigated by conventional and high resolution TEM. The 3C-SiC layers were nearly free of defects and the interface between different polytypes was abrupt. For the 3C-SiC layers the strain state and the lattice parameters have been investigated to a high...

High aspect ratio microchannels using high thermal conductivity materials such as silicon carbide (SiC) have recently been explored to locally cool micro-scale power electronics that are prone to on-chip hot spot generation. Analytical and finite element modeling shows that microchannels used for localized cooling should have high aspect ratio features (above 8:1) to enable the heat flux levels...

This study investigates the effects of micro- and nano-sized SiC powder on the rheological behavior of Al based feedstocks for powder injection molding (PIM).  Different compositions of Al feedstocks with additions of micro and nano-SiC powder were prepared and their rheological properties were measured with a rotational rheometer. The effects of SiC content and shear rate were investigated and...

Multiple User Interference (MUI) considers the primary problem in Optical Code-Division Multiple Access (OCDMA), which resulting from the overlapping among the users. In this article we aim to mitigate this problem by studying an interference cancellation scheme called successive interference cancellation (SIC) scheme. This scheme will be tested on two different detection schemes, spectral ampl...

Silicon carbide (SiC) dust and other dusts for comparison were injected intratracheally at a high dose (50 mg) into rats and the response of the lungs and the lymph nodes was studied after an appropriate experimental period. The indices studied were: histological changes in the lung and lymph nodes, organ weights, the formation of collagenous fibres, and the appearance of quartz typical areas. ...

Semilocal density functional approximations (DFAs) for the exchange-correlation energy suffer from self-interaction error, which is believed to be the cause of many of the failures of common DFAs, such as poor description of charge transfer and transition states of chemical reactions. The standard self-interaction correction (SIC) of Perdew and Zunger mends some of these failures but spoils suc...

The advantages that silicon carbide (SiC) based power electronic devices offer are being realized by using prototype or experimental devices in many different power applications ranging from medium voltage to high voltage or for high temperature or high switching frequency applications. The main advantages of using SiC-based devices are reduced thermal management requirements and smaller passiv...

Single Input Change (SIC) testing has been proposed for robust path delay fault testing. In this letter a new Built-In Self Test (BIST) method for SIC vector generation is presented. The proposed method compares favourably to the previously proposed methods for SIC pattern generation with respect to hardware overhead and time required for completion of the test.

A new simple and cheap method to grow large scale SiC-SiO2 nanocables on catalyzed Si substrate directly is presented. The method is based on the thermal decomposition of methanol. The grown nanocables consisted of crystalline 3C-SiC and amorphous SiO2. A simple etching and oxidation process was used to analyze the contribution of SiC and SiO2 components to photoluminescence.