نتایج جستجو برای: نانولوله sic

تعداد نتایج: 15076  

2016
Jianwu Sun Valdas Jokubavicius L. Gao Ian Don Booker Mattias Jansson Xinyu Liu M. Linnarsson P. Wellmann I. Ramiro A. Marti Rositsa Yakimova Mikael Syväjärvi Lu Gao Ian Booker Jan P. Hofmann Emiel J. M. Hensen Margareta Linnarsson Peter Wellmann Iñigo Ramiro Antonio Marti

There is a strong and growing worldwide research on exploring renewable energy resources. Solar energy is the most abundant, inexhaustible and clean energy source, but there are profound material challenges to capture, convert and store solar energy. In this work, we explore 3C-SiC as an attractive material towards solar-driven energy conversion applications: (i) Boron doped 3C-SiC as candidate...

2007
Jingchun Zhang Carlo Carraro Roger T. Howe Roya Maboudian

Polycrystalline 3C-SiC (poly-SiC) is a promising structural material for microelectromechanical systems (MEMS) used in harsh environments. In order to realize poly-SiC based MEMS devices, the electrical, mechanical and metal contact properties of poly-SiC have to be optimized. The poly-SiC films, reviewed here, are deposited by low pressure chemical vapor deposition using 1,3-disilabutane (DSB)...

ژورنال: :مهندسی مکانیک مدرس 0
سید حسین گنجیانی دانشگاه سیستان و بلوچستان علیرضا حسین نژاد عضو هیئت علمی گروه مکانیک دانشگاه سیستان و بلوچستان

در این کار، اثر طول نانولوله کربنی بر یک سیستم جذب انرژی نانوسیالی با استفاده از شبیه سازی دینامیک مولکولی بررسی شده است. برای این منظور 6 طولnm 5، 6 nm، 7 nm، 8 nm، 9 nm و nm 10 برای هر یک از چهار نانولوله کربنی صندلی تک جداره صلب (8,8)، (10,10)، (12,12) و (14,14) انتخاب شده است. نتایج شبیه سازی ها نشان می دهد که در طول و قطر های مختلف نانولوله کربنی، سطح نانولوله کربنی بدون اصطکاک است که باعث...

2011
Saurav Goel Xichun Luo Robert L Reuben Waleed Bin Rashid

Cubic silicon carbide (SiC) is an extremely hard and brittle material having unique blend of material properties which makes it suitable candidate for microelectromechanical systems and nanoelectromechanical systems applications. Although, SiC can be machined in ductile regime at nanoscale through single-point diamond turning process, the root cause of the ductile response of SiC has not been u...

Journal: :Occupational medicine 2013
T Hannu I Lindström P Palmroos O Kuuliala R Sauni

BACKGROUND It has previously been shown that a positive skin prick test (SPT) result is a good predictor of a positive specific inhalation challenge (SIC) in patients with occupational asthma (OA) related to wheat or rye flours. This association has not been previously studied in OA attributable to obeche wood. AIMS To describe a clinical series of patients with OA induced by obeche wood. To ...

در این تحقیق خواص مکانیکی نانوکامپوزیت پایه سیمانی تقویت شده با نانولوله های کربنی با روش میکرومکانیکال شبیه سازی شد. اثر پارامترهای مختلف مانند مدول سیمان، قطر داخلی نانولوله ها، قطر خارجی نانولوله ها، طول نانولوله ها، شکل المان انتخاب شده بر روی نتایج بدست آمده مورد بررسی قرار گرفت. در ادامه به منظور معتبر سازی این مدل، نتایج بدست آمده از مدل با نتایج تجربی محققان مختلف مقایسه شده است. نتایج ...

Journal: :journal of mechanical research and application 2011
g. hemath kumar m. sreenivasan s. muthu kumar n. dilip raja

in recent years the aluminum matrix composites are gaining wide spread applications in automotive, aerospace, defense, sport and other industries. the reason for this is their exciting properties like high specific strength, stiffness, hardness, wear resistance, dimensional stability and designer flexibility. the present work reports on mechanical properties and microstructure analysis of al-si...

Journal: :Microelectronics Journal 2005
T. V. Torchynska A. Díaz Cano S. Jiménez Sandoval M. Dybiec S. Ostapenko M. Mynbaeva

This paper presents results of porous Sic characterization using photoluminescence, Raman scattering and Atomic Force Microscopy. A comparative optical spectroscopy study on bulk Sic and porous Sic layers has shown a number of new features specific to nano-crystallite materials. The role of these effects on optical spectroscopy data in porous Sic accessed by photoluminescence and Raman scatteri...

2002
W. RICHTER

Multi-quantum well structures of 3C/4H-SiC polytypes grown either on stepped or on on-axis hexagonal SiC by molecular beam epitaxy have been investigated by conventional and high resolution TEM. The 3C-SiC layers were nearly free of defects and the interface between different polytypes was abrupt. For the 3C-SiC layers the strain state and the lattice parameters have been investigated to a high...

2015
Karen M. Dowling Mehdi Asheghi

High aspect ratio microchannels using high thermal conductivity materials such as silicon carbide (SiC) have recently been explored to locally cool micro-scale power electronics that are prone to on-chip hot spot generation. Analytical and finite element modeling shows that microchannels used for localized cooling should have high aspect ratio features (above 8:1) to enable the heat flux levels...

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