HfO2 films were grown on Si~100! by chemical vapor deposition as an attempt to develop an industrially straightforward gate dielectric deposition process. During deposition at ;400 °C the decomposition of the hafnium-tetra-tert-butoxide Hf(C4H9O)4 precursor provides sufficient oxygen to produce a stoichiometric HfO2 film. Medium energy ion scattering, high resolution transmission electron micro...

In this paper, the neural network based modeling for electrical characteristics of the HfO2 thin films grown by metal organic molecular beam epitaxy was investigated. The accumulation capacitance and the hysteresis index are extracted to be the main responses to examine the characteristics of the HfO2 dielectric films. The input process parameters were extracted by analyzing the process conditi...

Injecting charge carriers into the mobile bands of an inorganic oxide insulator (for example, SiO2, HfO2) is a highly complicated task, or even impossible without external energy sources such as photons. This is because oxide insulators exhibit very low electron affinity and high ionization energy levels. Here we show that a ZnO layer acting as a cathode buffer layer permits direct electron inj...

Ferroelectric transistors (FeFETs) based on doped hafnium oxide (HfO2) have received much attention due to their technological potential in terms of scalability, high-speed, and low-power operation. Unfortunately, however, HfO2-FeFETs also suffer from persistent reliability challenges, specifically affecting retention, endurance, variability. A deep understanding the physics is an essential pre...

The continuous size downscaling of complementary metal–oxide–semiconductor (CMOS) transistors has led to the replacement of SiO2 with a HfO2-based high dielectric constant (or high-k) oxide, and the polysilicon electrode with a metal gate. The approach to this technological evolution has spurred a plethora of fundamental research to address several pressing issues. This review focusses on the l...

Sub-30 nm III-V planar Quantum-Well (QW) n-type MOSFETs are fabricated through a self-aligned CMOS compatible front-end process. Good performance and short-channel effect mitigation are obtained through the use of a QW-channel that incorporates a thin pure InAs subchannel and extremely scaled HfO2 gate dielectric on a very thin InP barrier (total barrier EOT<1 nm). The devices also feature self...

Atomic layer deposited HfO2 is a primary candidate for metal–oxide–semiconductor (MOS) power devices based on the ultra-wide bandgap semiconductor ?-Ga2O3. Here, we investigated thermal stability of this stack. Out-diffusion gallium into HfO2, measured by secondary ion mass spectroscopy depth profile, was observed after annealing at 900 °C. Electrical characterization MOS capacitors (MOSCAPs) s...

3D-porous anisotropic solids are fabricated by using horizontally and vertically aligned assemblies of silica rods with a length of ca. 2 μm and a diameter of 500 nm as templates. Templated materials include examples from metals, semiconductors, ceramics, and polymers, Ni, Si, HfO2, and PMMA, respectively. By varying the infilling conditions, the detailed mesoscale structure and degree of aniso...