The authors report the growth of ZnSe/ZnSeTe superlattice nanotips on oxidized Si(100) substrate. It was found the nanotips exhibit mixture of cubic zinc-blende and hexagonal wurtzite structures. It was also found that photoluminescence intensities observed from the ZnSe/ZnSeTe superlattice nanotips were much larger than that observed from the homogeneous ZnSeTe nanotips. Furthermore, it was fo...

AlN nanolayers in sputter deposited {111}Al/AlN/TiN multilayers exhibit the metastable zinc-blende-structure (z-AlN). Based on density function theory calculations, the growth of the z-AlN is ascribed to the kinetically and energetically favored nitridation of the deposited aluminium layer. In situ nanoindentation of the as-deposited {111}Al/AlN/TiN multilayers in a high-resolution transmission...

We present a first principle investigation of the electronic structure and the band gap bowing parameter of zinc-blende AlxGa1−xN using both local density approximation and screened-exchange density functional method. The calculated sX-LDA band gaps for GaN and AlN are 95% and 90% of the experimentally observed values, respectively, while LDA underestimates the gaps to 62% and 70%. In contrast ...

Experimentally it is well known that diamond and zinc-blend semiconductors show an "unusual" (i.e. , negative) thermal expansion at about 100 K. We performed density-functional-theory calculations of thermodynamic potentials (i.e. , total energies and entropies) for perfect crystals, to study the temperature dependence of the lattice parameter. The origin of the negative expansion eff'ect is tr...

Zinc sulfide [ZnS] thin films were deposited on glass substrates using radio frequency magnetron sputtering. The substrate temperature was varied in the range of 100°C to 400°C. The structural and optical properties of ZnS thin films were characterized with X-ray diffraction [XRD], field emission scanning electron microscopy [FESEM], energy dispersive analysis of X-rays and UV-visible transmiss...

It is shown that absorption of circularly polarized infrared radiation due to intraband (Drude-like) transitions in n-type bulk semiconductors and due to intra-subband or inter-subband transitions in quantum well (QW) structures results in a monopolar spin orientation of free electrons. Spin polarization in zinc-blende-structure based QWs is demonstrated by the observation of the spin-galvanic ...

Calculation of the Raman spectra of zinc{blende InN/AlN superlattices were carried out assuming the existence of an interface region with thickness Æ varying from zero to three monolayers. Frequency shifts up to 80 cm 1 were observed for some of the optical frequencies when Æ = 3. Many peaks appearing at the low frequency side, shift toward the center position of the spectrum. As a consequence,...