The growth and interface magnetic properties of epitaxial Fe films grown on InAs (100)-4 2 have been studied using low-energy electron diffraction, in situ magneto-optical Kerr effect, and X-ray magnetic circular dichronism. The magnetic properties at room temperature were found to proceed via three phases with thickness; a nonmagnetic phase, a superparamagnetic phase, and a ferromagnetic phase...

This paper presents a method for modelling interfacial mass transfer in Interface Capturing simulations of two-phase flow with phase change. The model enables mechanistic prediction the local rate change at vapour-liquid interface on arbitrary computational meshes and is applicable to realistic cases involving mixtures large density ratios. simulation methodology based Volume Of Fluid (VOF) rep...

High Quality III-V Semiconductors/Si Heterostructures for Photonic Integration and Photovoltaic Applications Himanshu Kataria TRITA-ICT/MAP AVH Report 2014:13; ISSN 1653-7610; ISRN KTH/ICT-MAP/AVH-2014:13-SE ISBN 978-91-7595-289-5 Abstract This thesis deals with one of the promising strategies to monolithically integrate III-V semiconductors with silicon via epitaxial lateral overgrowth (ELOG) ...

In this article, we analyze the kinetics of heteroepitaxial growth of GaP on Si~100! by pulsed chemical beam epitaxy on the basis of results obtained by real-time optical process monitoring. In view of the large barrier to epitaxial growth on oxygen or carbon contaminated silicon surface elements and the low stacking fault energy for GaP, residual contamination of the silicon surface contribute...

Transmission electron microscopy techniques are applied to investigate three-dimensional (3D) microstructures of the GaN nonplanar substrate selectively grown by metalorganic chemical vapor deposition. Two-step lateral epitaxial overgrowth (LEO) has been utilized and optimized to fabricate fully coalesced nonplanar mesa substrate templates with the trapezoidal cross-section. All threading dislo...

Many different compound semiconductors can be formed by changing the combination of constituent elements. Properties of alloy semiconductors composed of a plurality of compound semiconductors can be changed in a continuous fashion by changing the composition ratio. A very thin alloy semiconductor multilayer showing interesting properties can be formed by sophisticated epitaxial growth methods s...

The effects of implantation energy and dose on Ge solid-phase epitaxial growth kinetics were studied using (0 0 1) Ge substrates self-implanted at energies of 20–150 keV and doses of 1 ! 10"2 ! 10 cm"2. All implants produced a continuous amorphous layer, which was crystallized by annealing at 330 !C for 22–176 min. At lower doses, the growth velocity was implant energy-independent while at high...

Chirality-controlled synthesis of single-wall carbon nanotubes with predefined chiralities has been an important but elusive goal for almost two decades. Here we demonstrate a general strategy for producing carbon nanotubes with predefined chiralities by using purified single-chirality nanotubes as seeds for subsequent metal catalyst free growth, resembling vapour-phase epitaxy commonly used fo...

We report here the epitaxial growth of InGaN/GaN quantum wells on freestanding GaN gratings by molecular beam epitaxy (MBE). Various GaN gratings are defined by electron beam lithography and realized on GaN-on-silicon substrate by fast atom beam etching. Silicon substrate beneath GaN grating region is removed from the backside to form freestanding GaN gratings, and the patterned growth is subse...