a simple and sensitive extractive- spectrophotometric method for thedeterrnination of trace amounts of vanadium(v) is reported. the method is based on the quantitative extraction of the anion complex of v(v) with 4-(2-pyridy1azo)-resorcinol with tetrabutylammonium perchlorate into chloroform, followed by spectrophotometric measurements at 554 nm. beer's law is obeyed over the concentration...

The V proteins of Nipah virus and Hendra virus have been demonstrated to bind to cellular STAT1 and STAT2 proteins to form high-molecular-weight complexes that inhibit interferon (IFN)-induced antiviral transcription by preventing STAT nuclear accumulation. Analysis of the Nipah virus V protein has revealed a region between amino acids 174 and 192 that functions as a CRM1-dependent nuclear expo...

This letter reports on a 108-GHz bandwidth 0.5- $\mu \text{m}$ InP DHBT analog-multiplexer-driver (AMUX-driver). To the best of authors’ knowledge, this 2:1 AMUX-driver shows unprecedented 1.9-V <sub xmlns:xlink="http://www.w3.org/199...

Gold electrodes disks (2.0 mm diameter, Metrohm) were mechanically polished with aluminum oxide pads or diamond spray on polishing cloth (Kemet) of progressively decreasing particle size: 1 μm, 0.3 μm and 0.05 μm, with intermittent sonication in water. The electrodes were then electrochemically polished in a deaerated NaOH or KOH 0.5 mol L between the potentials -1.5 V and -0.5 V vs. Ag|AgCl or...

We have experimentally extracted the virtual-source electron injection velocity, vx0, of various III-V HFETs at room temperature. This is the carrier velocity that matters for logic applications of these transistors. Sub-100 nm devices with μn > 10,000 cm/V-s exhibit vx0 in excess of 3 × 10 cm/s even at VDD = 0.5 V. This is over 2 times that of state-of-the-art Si devices at VDD > 1. We have ve...

The bias dependence of the tunnel magnetoresistance TMR of Fe/MgO/Fe tunnel junctions is investigated theoretically with a fully self-consistent scheme that combines the nonequilibrium Green’s-function method with density-functional theory. At voltages smaller than 20 mV the I-V characteristics and the TMR are dominated by resonant transport through narrow interface states in the minority-spin ...