In a collinear antiferromagnet with easy-axis anisotropy, symmetry dictates that the spin wave modes must be doubly degenerate. Theses two modes, distinguished by their opposite polarization and available only in antiferromagnets, give rise to a novel degree of freedom to encode and process information. We show that the spin wave polarization can be manipulated by an electric field induced Dzya...

A novel method for the reduction of subthreshold slope below the room-temperature Boltzmann limit of 60 mV/dec for a field-effect transistor based on negative differential capacitance is proposed. This effect uses electric field induced electrostriction of a piezoelectric gate barrier of the transistor. The mechanism amplifies the internal surface potential over the applied gate voltage. This i...

Field-effect transistor biomolecular sensors based on low-dimensional nanomaterials boast sensitivity, label-free operation and chip-scale construction. Chemical vapour deposition graphene is especially well suited for multiplexed electronic DNA array applications, since its large two-dimensional morphology readily lends itself to top-down fabrication of transistor arrays. Nonetheless, graphene...

graphene, after its first production in 2004 have received lots of attentions from researchers because of its unique properties. high mobility, high sensitivity, high selectivity and high surface area make graphene excellent choice for bio application. one of promising graphene base device that has amazingly high sensitivity is graphene field-effect transistor (gfet). this review selectively su...

the construction of underground tunnel plays a more and more important role in the development of big cities. one of the most important problems caused by the construction of the tunnel is that underground excavation will cause large settlement of the ground and buildings. previous studied showed the difference between numerical and experimental results. in this study the case study of niyayesh...

Carbon nanomaterials field-effect transistor (FET)-based electrical biosensors provide significant advantages over the current gold standards, holding great potential for realizing direct, label-free, real-time electrical detection of biomolecules in a multiplexed manner with ultrahigh sensitivity and excellent selectivity. The feasibility of integrating them with current complementary metal ox...

Single-electron transistors (SETs) are used to perform sensitive charge measurements and are widely discussed as possible components of dense integrated circuit. An exact model for a single-electron transistor (SET) was developed [1] early, within the circuit simulation package SPICE; it's constituted by two tunnel junctions, with two gates coupled to the island. We will present here a descript...

The Hamiltonian size reduction method or the mode space applicable to general heterogeneous structures is developed in this work. effectiveness and accuracy of are demonstrated for four example devices GaSb/InAs tunnel field effect transistor (FET), MoTe2/SnS2 bilayer vertical FET, InAs nanowire FET with a defect, Si rough surfaces. reduced around 5 % original full without losing calculated tra...

The optical logic unit cell is the photonic analog to transistor-transistor logic in electronic devices. Active devices such as InP-based semiconductor optical amplifiers (SOA) emitting at 1550 nm are vertically integrated with passive waveguides using the asymmetric twin waveguide technique and the SOAs are placed in a Mach-Zehnder interferometer (MZI) configuration. By sending in high-intensi...

Abstract— According to the rules of quantum mechanics there is a non-vanishing probability of for an electron to tunnel through a thin insulating barrier or a thin capacitor which is not possible according to the laws of classical physics. Tunneling of electron through a thin insulating barrier or tunnel junction is a random event and the magnitude of current flowing due to the tunneling of ele...