Hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) pixel electrode circuit with a function of current scaling is proposed for active-matrix organic light-emitting displays (AM-OLEDs). In contrast to the conventional current mirror pixel electrode circuit, in this circuit a high data-to-organic light-emitting device (OLED) current ratio can be achieved, without increasing the a-Si:...

the effect of evaporation rate on structural, morphological and optical properties of electron beam evaporated cds thin films have been investigated. cds thin film deposited by electron beam evaporation method in 12nm/min and 60nm/min evaporation rates on glass substrates. x-ray diffraction, scanning electron microscopy, uv-vis-nir spectroscopy and atomic force microscopy were used to character...

as we know sol-gel is one of the most important techniques for thin film preparation. in this paper, high transmission silica thin films have been prepared by dip-coating process from a new silicon-alkoxide solution. the prepared sol was stable for 45 days which is very important to characterize the coating process. the optical properties as a function of aging time, withdrawal rate, and heat t...

in this study, tio2 and zno nanofilms were prepared by sol-gel spin-coating method. nanofilms were characterized by x-ray diffraction (xrd), energy dispersive analysis of      x-ray (edx), scanning electron microscopy (sem) and field emission scanning electron microscopy (fe-esm). structural and morphological properties of nanofilms were investigated. the average crystalline size of tio2 and zn...

thin bonded films have many applications in antireflection and reflection coating, insulating and conducting films and semiconductor industries. thermal conductivity is one of the most important parameter for power packaging since the thermal resistance of the interconnections is directly related to the heat removal capability and thermal management of the power package. the defects in material...

Hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) pixel electrode circuit with a function of current scaling is proposed for active-matrix organic light-emitting displays (AM-OLEDs). In contrast to the conventional current mirror pixel electrode circuit, in this circuit a high data-to-organic light-emitting device (OLED) current ratio can be achieved, without increasing the a-Si:...

Current methodologies used for the inference of thin film stress through curvature measurement are strictly restricted to stress and curvature states that are assumed to remain uniform over the entire film/substrate system. These methodologies have recently been extended to a single layer of thin film deposited on a substrate subjected to the non-uniform misfit strain in the thin film. Such met...

CdTe thin films with 2.8 µm thickness were deposited by electron beam evaporation method. X-ray diffraction, scanning electron microscopy, UV-Vis-NIR spectroscopy and atomic force microscopy (AFM) were used to characterize the films. The results of AFM analysis revealed that the CdTe films have uniform surface. CdTe thin films were heat-treated by SnCl2 solution. Structural analysis using XRD s...

When devices are fabricated on thin foil substrates, any mismatch strain in the device structure makes the work piece curve. Any change of the radius of curvature produces a change in the size of the work piece, and thereby misalignment between individual device layers. To achieve tight tolerances, changes of curvature must be minimized throughout the fabrication process. Amorphous silicon thin...