This review is concerned with the characterization and identification of the deep centres that cause current collapse in nitride-based field effect transistors. Photoionization spectroscopy is an optical technique that has been developed to probe the characteristics of these defects. Measured spectral dependences provide information on trap depth, lattice coupling and on the location of the def...

In situ-formed SiO2 was introduced into HfO2 gate dielectrics on Ge substrate as interlayer by plasma-enhanced atomic layer deposition (PEALD). The interfacial, electrical, and band alignment characteristics of the HfO2/SiO2 high-k gate dielectric stacks on Ge have been well investigated. It has been demonstrated that Si-O-Ge interlayer is formed on Ge surface during the in situ PEALD SiO2 depo...

Novel mixed amido/imido/guanidinato complexes of niobium are reported. The complexes were synthesized by insertion of two equivalents of di-isopropylcarbodiimide (i-Pr-cdi) or bis-cyclohexylcarbodiimide (Cy-cdi) respectively, into the niobium-amido bonds of [Nb(NR(2))(3)(N-t-Bu)] (, R = Me; , R = Et) starting out from [NbCl(3)(N-t-Bu)(py)(2)] and the respective LiNR(2) reagent (py = pyridine). ...

Abstract RE–Ba–Cu–O (REBCO, RE = rare earth) symmetric tape round (STAR ® ) wires of 1.5–2.5 mm diameter have been fabricated with 4–12 strands REBCO made by advanced metal organic chemical vapor deposition (MOCVD). 1.5 STAR just four MOCVD are able to sustain nearly the same critical current ( I c as 2.5 12 commercial-grade strands. An 1070 A, corresponding an engineering density J e 597 A −2 ...

Gallium oxide (Ga2O3) is rapidly emerging as a material of choice for the development solar blind photodetectors and power electronic devices which are particularly suitable in harsh environment applications, owing to its wide bandgap extremely high Baliga figure merit (BFOM). The Ga2O3 based show robustness against chemical, thermal radiation environments. Unfortunately, current technology sti...

We report on DC and RF measurement results of AlScN/GaN high electron mobility transistors (HEMTs) grown by metal-organic chemical vapor deposition (MOCVD). Comparing the properties with those a wafer same MOCVD tool but featuring an AlGaN barrier, sheet carrier density ( <tex-math notatio...

Two-dimensional (2D) indium monoselenide (InSe) has attracted significant attention as an ultrathin III–VI semiconductor with a combination of favorable attributes that are comparable to those III–V semiconductors and van der Waals 2D transition-metal dichalcogenides. Nevertheless, there been no demonstration large-area synthesis InSe due the complexity binary In-Se system difficulties in promo...

Scandium complexes with β-diketonate ligands are valuable precursors for the metal–organic chemical vapor deposition (MOCVD) of scandia based materials, but data on their volatilization thermodynamics crucial to MOCVD technology in a huge disarray. We have addressed this issue diagnostic tool principles group additivity and structure–property relationships, which had been developed by us specif...