نتایج جستجو برای: substitutional doping

تعداد نتایج: 27239  

Journal: :Acta Materialia 2022

Spintronics is the fast growing field that will play a key role in optimizing power consumption, memory, and processing capabilities of nanoelectronic devices. Heusler alloys are potential candidates for application spintronics due to their room temperature (RT) half-metallicity, high Curie temperature, low lattice mismatch with most substrates, strong control on electronic density states at Fe...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه گیلان - دانشکده علوم پایه 1390

در این تحقیق، ساختار لیزرهای نقطه کوانتومی، مشخصه ها، نواقص، و همچنین فاکتور های محدود کننده سرعت مدولاسیون بالا و تکنولوژی های کلیدی برای بهبود عملکرد آن بیان می شوند. با بررسی اثر پهن شدگی گرمایی حفره ها که ناشی از جرم موثر سنگین ، حفره ها در نوار ظرفیت لیزر های نقطه کوانتومی است ، نشان می دهیم که یکی از عوامل مهم در محدود کردن سرعت مدولاسیون لیزرهای نقطه کوانتومی ، نزدیکی بیش از اندازه تراز ...

1998
Pedro de Vries

Resonant classical light scattering by impurity atoms inside dielectric cubic lattices is investigated in the point-dipole limit. Modifications to resonance frequencies and linewidths are shown to be different for substitutional and interstitial impurities. Spontaneous emission rates inside dielectrics exhibit the well-known empty-cavity and Lorentz local-field factors for substitutional and in...

Journal: :Ceramics International 2021

Current research on transparent conductive oxides deals with the development of environmentally friendly materials having competitive electrical and optical properties. Also, synthesis methods need to be compatible state-of-the-art microelectronics miniaturization. ZnO films doped Al (AZO) via Atomic Layer Deposition (ALD) have been subjected thorough investigation for latter. However, conventi...

Journal: :Nanoscale 2021

The efficient integration of transition metal dichalcogenides (TMDs) into the current electronic device technology requires mastering techniques effective tuning their optoelectronic properties. Specifically, controllable doping is essential. For conventional bulk semiconductors, ion implantation most developed method offering stable and tunable doping. In this work, we demonstrate n-type in Mo...

Journal: :Physical chemistry chemical physics : PCCP 2016
Safdar Nazir Maziar Behtash Jianli Cheng Jian Luo Kesong Yang

The two-dimensional electron gas (2DEG) formed at the n-type (LaO)(+1)/(TiO2)(0) interface in the polar/nonpolar LaAlO3/SrTiO3 (LAO/STO) heterostructure (HS) has emerged as a prominent research area because of its great potential for nanoelectronic applications. Due to its practical implementation in devices, desired physical properties such as high charge carrier density and mobility are vital...

2012
Marciano Sánchez Marina Rincón

Design of composite materials for ammonia (NH3) sensing is important because of two main reasons: (1) NH3 is the most common substitute for chlorofluorocarbons (CFCs) in cooling systems, and (2) most sensors show long recovery times at room temperature due to the tendency of ammonia to strongly interact with many substrates. Multiwalled carbon nanotubes (MWCNTs) have been used to sense polar mo...

Journal: :Journal of Advanced Ceramics 2022

Abstract Photocatalytic CO 2 reduction driven by green solar energy could be a promising approach for the carbon neutral practice. In this work, novel defect engineering was developed to form Sn x Nb 1− O solid solution heavy substitutional Nb-doping of SnO through robust hydrothermal process. The detailed analysis demonstrated that substitution 4+ higher valence 5+ created more suitable band s...

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