Single Electron transistor have high integration density, ultra-low power dissipation, ultra-small size, unique coulomb blockade oscillation characteristics which makes an attractive technology for future low power VLSI/ULSI systems. The Single Electron Transistor have extremely poor driving capabilities so that direct application to practical circuits is a yet almost impossible, to overcome th...

In recent years several suggestions how to set up a single electron transistor have been made [1,2,3,4]. The development of new methods to contact molecules or molecule-like systems and control the electron transport through them [5,6,7] is a major issue in the promising field of molecular electronics [8,9]. The conventional setup of such a transistor requires a gate in order to trigger via the...

A novel reconfigurable hybrid single electron transistor/MOSFET (SETMOS) circuit architecture, namely, reconfigurable pseudo-NMOS-like logic is proposed. Based on the hybrid SETMOS inverter/buffer circuit cell, reconfigurable pseudo-NMOS-like logics that can work normally at room temperature are constructed. This kind of reconfigurable logic can implement up to 2n sorts of functions at n inputs...

| This article describes an analog neuron and synapse cell that each consist of only one Single Electron Tunneling (SET) Transistor. Simulation results show that using the Random Weight Changing Learning algorithm, a small neural network with these devices can learn the XOR function. The periodic transfer function and the random ooset charges of the transistor can successfully be dealt with by ...

Heteroaromatic oligomer 5,7,12,14-tetrachloro-6,13-diazapentacene (TCDAP) was characterized and assessed as n-channel material in field-effect transistor applications. A single-crystal transistor based on TCDAP as the channel material exhibits a very high electron mobility of 3.39 cm(2) V(-1) s(-1) and an on/off ratio of ∼1.08 × 10(4) respectively.

In this chapter, we review the experimental efforts that focus on the measurement of single-electron spins in two particular Si-based semiconductor nanostructure systems. First, we describe experiments in a real transistor structure (i.e., a submicrometer commercial Si field effect transistor) in which the source/drain channel is used to electrically detect the spin states of an adjacent single...

PACS. 73.63.-b – Electronic transport in mesoscopic or nanoscale materials and structures.. PACS. 73.23.Hk – Coulomb blockade; single-electron tunneling. PACS. 85.85.+j – Micro-and nano-electromechanical systems (MEMS/NEMS) and devices. Abstract. – Effects of a coupling between the mechanical vibrations of a quantum dot placed between the two leads of a single electron transistor and coherent t...

As the size of a transistor continuously scales down, single electron effects become important [1 – 3]. Previously, we have studied charge transport in single-electron quantum dot transistors which have a channel consisting of a silicon dot separated from the source and the drain by two constrictions [4], and in single-electron MOS memories that have a polysilicon dot floating gate stacked on a...

In this letter, we shall describe a method, utilizing the proximity effect in electron beam lithography, suitable for fabricating silicon dots and devices, and demonstrate the electronic characteristics of the Si single-electron transistor. The drain current sIdd of the device oscillates against gate voltage. The electrical characteristics of the single-electron transistor were observed to be c...