نتایج جستجو برای: single electron device

تعداد نتایج: 1718195  

2015
Jiaju Ma Eric R. Fossum

The Quanta Image Sensor (QIS) is a possible 3 generation image sensor. A QIS consists of a large array of photodetectors (perhaps a billion) that are capable of sensing a single photoelectron with high SNR. Such a binary output photodetector is called a “jot”. It requires small size (e.g. 500 nm pitch), high quantum efficiency, and very low readout noise (e.g. <0.2 electrons rms). A key require...

Journal: :The Journal of Cell Biology 1964
Elliott Robbins Nicholas K. Gonatas

A problem of considerable magnitude in electron microscope technology is that of sampling. This is especially true in the study of mitosis. Even in cell culture, localization of the various mitotic phases by conventional techniques of large scale screening is both time consuming and, in many instances, unsuccessful. In order to circumvent this problem, Bloom has constructed a relatively elabora...

2017
Norihiro Shimoi Kazuyuki Tohji

Field emitters can be used as a cathode electrode in a cathodoluminescence device, and single-walled carbon nanotubes (SWCNTs) that are synthesized by arc discharge are expected to exhibit good field emission (FE) properties. However, a cathodoluminescence device that uses field emitters radiates rays whose intensity considerably fluctuates at a low frequency, and the radiant fluctuation is cau...

2016
B. A. Turek K. W. Lehnert A. Clerk D. Gunnarsson K. Bladh P. Delsing R. J. Schoelkopf

B. A. Turek,1 K. W. Lehnert,1 A. Clerk,1 D. Gunnarsson,2 K. Bladh,2 P. Delsing,2 and R. J. Schoelkopf1 1Department of Applied Physics and Department of Physics, Yale University, New Haven, Connecticut 06511, USA 2Microtechnology Center at Chalmers MC2, Department of Microelectronics and Nanoscience, Chalmers University of Technology and Goteborg University, SE-412 96 Goteborg, Sweden Received 2...

Journal: :Nano letters 2015
Max Koole Jos M Thijssen Hennie Valkenier Jan C Hummelen Herre S J van der Zant

It is understood that molecular conjugation plays an important role in charge transport through single-molecule junctions. Here, we investigate electron transport through an anthraquinone based single-molecule three-terminal device. With the use of an electric-field induced by a gate electrode, the molecule is reduced resulting into a 10-fold increase in the off-resonant differential conductanc...

2007
O. Usmani V. Nazarov

We demonstrate the feasibility of a strong feedback regime for a single-electron tunneling device weakly coupled to an underdamped single-mode oscillator. In this regime, mechanical oscillations are generated and the current is strongly modified, whereas the current noise is parametrically large with respect to the Poisson value. This regime requires energy dependence of the tunnel amplitudes. ...

Journal: :Physical review letters 2009
S Kafanov A Kemppinen Yu A Pashkin M Meschke J S Tsai J P Pekola

We demonstrate experimentally that a hybrid single-electron transistor with superconducting leads and a normal-metal island can be refrigerated by an alternating voltage applied to the gate electrode. The simultaneous measurement of the dc current induced by the rf gate through the device at a small bias voltage serves as an in situ thermometer.

Journal: :Chemical communications 2016
Bo Chen Lei Zhao Junqiao Ding Lixiang Wang Xiabin Jing Fosong Wang

An alcohol-soluble and ion-free small molecule TPPO functionalized with phosphonate groups has been developed as the electron transporting material for multilayer PLEDs fabricated via an orthogonal solvent strategy. A state-of-art current efficiency as high as 11.6 cd A-1 is achieved, which is about 16 times higher than that of the single-layer device without TPPO (0.7 cd A-1).

2007
Vishwanath Joshi Alexei O. Orlov Gregory L. Snider

In this article, the authors report experimental results of the chemical mechanical polishing CMP of silicon dioxide SiO2 and polysilicon to produce nanoscale features with very smooth surfaces. The sizes of the features polished ranged from 30 to 500 nm. For polysilicon polishing, the nanostructures were defined in positive tone e-beam resist and the pattern was transferred to the oxide substr...

Journal: :Physical review letters 2001
A Aassime G Johansson G Wendin R J Schoelkopf P Delsing

We study the radio-frequency single-electron transistor (rf-SET) as a readout device for charge qubits. We measure the charge sensitivity of an rf-SET to be 6.3microe/sqrt[Hz] and evaluate the backaction of the rf-SET on a single Cooper-pair box. This allows us to compare the needed measurement time with the mixing time of the qubit imposed by the measurement. We find that the mixing time can b...

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