Combining orientation dependent electrically detected magnetic resonance and g tensor calculations based on density functional theory we assign microscopic structures to paramagnetic states involved in spin-dependent recombination at the interface of hydrogenated amorphous silicon crystalline silicon (a-Si:H/c-Si) heterojunction solar cells. We find that (i) the interface exhibits microscopic r...

We present density functional and many body perturbation theory calculations of the electronic, optical, and impact ionization properties of Si nanoparticles (NPs) with core structures based on high-pressure bulk Si phases. Si particles with a BC8 core structure exhibit significantly lower optical gaps and multiple exciton generation (MEG) thresholds, and an order of magnitude higher MEG rate t...

A silicon atom in the zero oxidation state stabilized by two carbene ligands is known as siladicarbene (silylone). There are two pairs of electrons on the silicon atom in silylone. This was recently confirmed by both experimental and theoretical charge density investigations. The silylone is stable up to 195 °C in an inert atmosphere. However, a substoichiometric amount (33 mol%) of potassium m...

BACKGROUND The incorporation of silica within the plant cell wall has been well documented by botanists and materials scientists; however, the means by which plants are able to transport silicon and control its polymerization, together with the roles of silica in situ, are not fully understood. RECENT PROGRESS Recent studies into the mechanisms by which silicification proceeds have identified...

The thermoelectric performance of materials is determined by the figure of merit ZT=σS2/(κe+κl), where σ is the electrical conductivity, S is the Seebeck coefficient and κe and κl are the electronic and lattice contributions to the thermal conductivity, respectively. The interrelation between these quantities has traditionally kept ZT low, around unity. Nanomaterials have recently attracted sig...

A theoretical model of generation-recombination mechanism of charge carriers in pn a-Si:H junctions with high internal builtin electric fields is developed in which the capture-emission transitions are treated in a similar way as in the SRH generationrecombination approach. In this way, the effects of the tunneling-assisted transitions between the transport edges and the traps are expressed by ...

The purpose of our contribution is to analyse the notion of routine as it is developed in recent economic literature in the light of two past economists, Joseph Schumpeter and Ludwig von Mises. We will focus on one peculiar feature put forward by the two Austrian economists, namely, on the distinction between adaptive / routine-minded behaviour on one side, and active / creative behaviour on th...

We have fabricated narrow channel Si-MOSFETs for electron transport studies at low temperature. The fabrication process combines optical lithography for large structures and high resolution e-beam lithography for narrow gates. The smallest working devices have a 0.14 pm wide gate. This paper reports the fabrication process and gives some examples of the quantum transport phenomena observed in t...

We have observed reproducible conductance fluctuations at low temperature in a small GaAs:Si wire driven across the Anderson transition by the application of a gate voltage. We analyse quantitatively the log-normal conductance statistics in terms of truncated

The structure of the title dehydrated copper silicate, disodium dicopper undeca-oxide tetra-silicate, Na(2)(Cu(2)O(11)Si(4)), was determined by single-crystal X-ray diffraction from a non-merohedral twin. It exhibits an effective three-dimensional microporous framework with the major channels, in which the Na(+) cations are placed, running along the a-axis direction and smaller channels observe...