In this paper we report a novel fabrication technique for silicon photonic waveguides with sub-micron dimensions. The technique is based upon the Local Oxidation of Silicon (LOCOS) process widely utilised in the fabrication of microelectronics components. This approach enables waveguides to be fabricated with oxide sidewalls with minimal roughness at the silicon/SiO2 interface. It is also suffi...

We report a novel inkless soft lithographic fabrication protocol that permits uniform parallel patterning of hydrogen-terminated silicon surfaces using catalytic elastomeric stamps. Pattern transfer is achieved catalytically via reaction between sulfonic acid moieties covalently bound to an elastomeric stamp and a Boc-functionalized SAM grafted to passivated silicon. The approach represents the...

Silicon nanoparticles were prepared and functionalized with alkene-terminated poly(ethylene oxide) to impart amphiphilic solution properties to the particles.

In this paper, we discuss the role of adequate modelling tools in the development of nanoelectronic technology and devices, including both down-the-roadmap Complementary Metal-Oxide-Semiconductor (CMOS) technology and alternative nanodevices. Such tools can enable understanding of the relevant physical mechanisms on the one hand, and performance evaluation and optimization of device structures,...

We report on the fabrication and characterization of a distributed feedback channel waveguide laser in erbium-doped aluminium oxide on a standard thermally oxidized silicon substrate. Holographically-written surface-relief Bragg gratings have been integrated with the aluminium oxide waveguides via reactive ion etching of a silicon dioxide overlay film. The laser operates at a wavelength of 1545...

In this work, some of the possibilities of focused ion beams for applications in microsystem technology are explored. Unlike most previous studies, the emphasis is on ‘additive’ techniques, i.e. localized maskless deposition of metals and insulators. More precisely, we will show the possibility of fabricating small three-dimensional structures, using focused ion beam deposition of silicon oxide...

Introduction The main cause of operational degradation in MOS devices is believed to be due to the buildup of charge at the Silicon-Oxide interface. This leads to reduced saturation currents and threshold voltage shifts in MOSFET devices. Physics-based models of the degradation process typically consider the breaking of Si-H bonds (depassivation) at the Silicon-Oxide interface to be the main ca...

A technique, called velocity controlled anodization nanolithography, is presented that ensures line continuity during atomic force microscope based local anodic oxidation on silicon. Spontaneous current spikes disrupt the generation of uniform silicon oxide patterns during lithography at low humidity. Varying the translational speed during lithography in response to the current fluctuations ena...

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