نتایج جستجو برای: silicon dioxide nanoparticle
تعداد نتایج: 188643 فیلتر نتایج به سال:
Aerial–aquatic robotic vehicles show great potential in assisting disaster response and environmental monitoring. However, to undertake these missions, they need overcome the challenges of power requirements for takeoff difficulty transitioning reliably between air water media. The use superhydrophobic surfaces offers solutions by reducing wetted surface area such vehicles. In this article, a r...
The efficiency of a photovoltaic (PV) panels drops significantly in dusty environments. variation temperature could have substantial impact on PV panel cells, which further lead to high deterioration and eventually permanent damage the material presence dust. To resolve this issue, work novel hydrophobic silicon dioxide (SiO2)-based nanoparticle coating is proposed for panel, shrink surface str...
The ion implantation of heavy dopant species through very thin silicon oxide gate insulators d?grades the insulating properties of the oxide inducing an enhanced leakage current in MOS siructures as well as a decrease of the dielectric breakdown voltage. In the present work we study quantitatively the possible physico-chemical causes of these degradation phenomena a l d of their recovery by the...
Silicon tips used as field emitters have dimensions that are within the quantum confinement regime. Therefore they can be considered as freestanding silicon tips. In this letter, a photoluminescence spectrum of a 1003100 array of silicon tips was taken at 10 K. Narrow ultraviolet luminescence peaks were observed. Using the empirical pseudopotential homojunction model, it is demonstrated that th...
The field of plasma etching is reviewed. Plasma etching, a revolutionary extension of the technique of physical sputtering, was introduced to integrated circuit manufacturing as early as the mid 1960s and more widely in the early 1970s, in an effort to reduce liquid waste disposal in manufacturing and achieve selectivities that were difficult to obtain with wet chemistry. Quickly, the ability t...
Recently, high – K materials such as Al2O3 and TiO2 films have been studied to replace ultra thin gate silicon dioxide film. In the present work, these films were grown on the top of Si(100) surface at different temperatures and under ultra high vacuum conditions. The obtained results showed that Al2O3 has a structure better than that of TiO2 and thus can be used as a good gate dielectric ...
BACKGROUND Silicon dioxide composites have been found to enhance the mechanical properties of scaffolds and to support growth of human adipose tissue-derived stem cells (hADSCs) both in vitro and in vivo. Silica (silicon dioxide alone) exists as differently sized particles when suspended in culture medium, but it is not clear whether particle size influences the beneficial effect of silicon dio...
Silicon and aluminum sources are most important reactants in the synthesis of zeolite. The use of the silicon source has an important effect on the crystallization of zeolites. Also, it can change the properties of the end product. This work reports the influence of three common commercial silica sources such as colloidal silica (Ludox AM-30), fumed silica and water glass on the crystallinity o...
A new method of fabricating high aspect ratio nanostructures in silicon without the use of sub-micron lithographic technique is reported. The proposed method comprises two important steps including the use of CMOS spacer technique to form silicon nitride nanostructure masking followed by deep reactive ion etching (DRIE) of the silicon substrate to form the final silicon nanostructures. Silicon ...
The paper deals with the measurement of the radius of curvature of silicon wafer surface. The aim of these measurements was to determine stresses generated during oxidation of silicon wafers. A greater molar volume of SiO2 layer in relation to the substrate material causes changes in the shape of oxidized surface, which results in stresses in both silicon dioxide layer and silicon. These change...
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