This chapter reviews the novel fabrication process of continuous SiCf /SiC composites based on electrophoretic deposition (EPD). EPD process is very effective for achieving relatively homogeneous carbon coating with the thickness of several tens to hundreds nanometers on SiC fibers. Carbon interface with the thickness of at least 100 nm formed by EPD acts effectively for inducing interfacial de...

Whereas SiC switches have the overall lowest dynamic losses, they show higher static losses due to the lack of conductivity modulation and the necessary chip size limitations due to the still high SiC base material price. The frequency dependence of the total losses of the various 1200V configurations (Si-IGBT + Si freewheeling diode, Si IGBT + SiC Schottky diode, SiC-JFET cascode plus internal...

This paper focuses on using high temperature operating capability of SiC power devices, which are packaged in power modules. A SiC Schottky barrier diode is mounted on an active metal brazed Si3N4 substrate as a heat resistive power module. The temperature dependency of electrical characteristics of the SiC device and thermal dynamics of the power module are modeled for numerical electro therma...

The newest semiconductor devices on the market are MOSFET transistors based on the silicon carbide – SiC. This material has exclusive features thanks to which it becomes a better switch than Si – silicon semiconductor switch. There are some special features that need to be understood to enable the device’s use to its full potential. The advantages and differences of SiC MOSFETs in comparison wi...

Articles you may be interested in Atomic state and characterization of nitrogen at the SiC/SiO2 interface Phosphorous and nitrogen are electrically active species at the SiO 2 /SiC interface in SiC MOSFETs. We compare the concentration, chemical bonding, and etching behavior of P and N at the SiO 2 /SiC(0001) interface using photoemission, ion scattering, and secondary ion mass spectrometry. Bo...

In this paper, comparisons of damage evolution between 2D C/SiC and SiC/SiC ceramic-matrix composites (CMCs) under tension-tension cyclic fatigue loading at room and elevated temperatures have been investigated. Fatigue hysteresis loops models considering multiple matrix cracking modes in 2D CMCs have been developed based on the damage mechanism of fiber sliding relative to the matrix in the in...

A thin, chemically inert 3C-SiC layer between GaN and Si helps not only to avoid the "melt-back" effect, but also to inhibit the crack generation in the grown GaN layers. The quality of GaN layer is heavily dependent on the unique properties of the available 3C-SiC/Si templates. In this paper, the parameters influencing the roughness, crystalline quality, and wafer bow are investigated and engi...

This paper reports on SiC devices operating in a dc-dc buck converter under extremely high ambient temperatures. To this end, the authors packaged SiC JFET and Schottky diodes in thermally stable packages and built a high-temperature inductor. The converter was tested at ambient temperatures up to 400◦C. Although the conduction loss of the SiC JFET increases slightly with increasing temperature...

4H-SiC is a wide-bandgap semiconductor with potential applications in power devices. The lack of a liquid phase in SiC hinders conventional crystal growth from the melt; consequently, SiC wafers still have low quality and are nearly 100 times more expensive than Si wafers. To take advantage of the solution growth for improving the quality and reducing the cost of SiC, Ni addition to Si-Ti flux ...