This paper reports on swift heavy ion beam induced epitaxial crystallization of a buried Si3N4 layer. Transmission electron microscopy and selected area diffraction patterns have been used to study the epitaxial growth of the buried Si3N4 layer. We observe good epitaxial crystallization at 150 C and 200 C, respectively for 70 MeV Si and 100 MeV Ag ions at an ion fluence of 1 × 10 ions cm. The f...

The nanopore sensor as a high-throughput and low-cost technology can detect a single molecule in a solution. In the present study, relatively large silicon nitride (Si3N4) nanopores with diameters of ∼28 and ∼88 nm were fabricated successfully using a focused Ga ion beam. We have used solid-state nanopores with various sizes to detect the single horseradish peroxidase (HRP) molecule and for the...

A spectroscopic study of cubic silicon nitride (γ-Si3N4) at cryogenic temperatures of 8 K in the near IR - VUV range of spectra with synchrotron radiation excitation provided the first experimental evidence of direct electronic transitions in this material. The observed photoluminescence (PL) bands were assigned to excitons and excited and centers formed after the electron capture by neutral st...

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Optical forces in guided-wave nanostructures have recently been proposed as an effective means of mechanically actuating and tuning optical components. In this work, we study the properties of a photonic crystal optomechanical cavity consisting of a pair of patterned Si3N4 nanobeams. Internal stresses in the stoichiometric Si3N4 thin-film are used to produce inter-beam slot-gaps ranging from 56...

Molecular dynamics simulations allow to investigate the microscopic evolution of a structure, and can also point way tool material design. In this paper, effect adding CaF2 CaF2@SiO2 on Si3N4/TiC system is studied using molecular simulations. The results show that with addition model has higher hardness than CaF2. order obtain optimum parameters for self-lubricating ceramic tools, different amo...

We report the fabrication and electrical characterization of single-hole transistors (SHTs), in which a Ge spherical quantum dot (QD) weakly couples to self-aligned electrodes via self-organized tunnel barriers Si3N4. A combination lithographic patterning, sidewall spacers, selfassembled growth was used for fabrication. The core experimental approach is based on selective oxidation poly-SiGe sp...