نتایج جستجو برای: si وsiga
تعداد نتایج: 74952 فیلتر نتایج به سال:
In a previous communication, we showed that a single Au atom behaves like H in its bonding to Si in a series of Si-Au clusters, SiAu(n) (n = 2-4) (Kiran et al. Angew. Chem., Int. Ed. 2004, 43, 2125). In this article, we show that the H analogy of Au is more general. We find that the chemical bonding and potential energy surfaces of two disilicon Au clusters, Si(2)Au(2) and Si(2)Au(4), are analo...
Cathodoluminescence (CL) imaging and spectroscopy have been used to characterize fully strained SiGe quantum wells grown on Si. At T-5 K, the CL spectra contain only band edge luminescence features. Monochromatic imaging with the no-phonon line attributed to the bound excitons in the quantum well, has shown that the distribution of the luminescence from the wells is not uniform. The thinnest we...
The heterogeneous nucleation of primary Si and eutectic Si can be attributed to the presence of AlP. Although P, in the form of AlP particles, is usually observed in the centre of primary Si, there is still a lack of detailed investigations on the distribution of P within primary Si and eutectic Si in hypereutectic Al-Si alloys at the atomic scale. Here, we report an atomic-scale experimental i...
A basic problem in silicon (Si) uptake studies in biology is the lack of an appropriate radioactive isotope. Radioactive germanium-68 ((68)Ge) has been used previously as a Si tracer in biological materials, but its suitability for the study of Si transport in higher plants is still untested. In this study, we investigated (68)Ge-traced Si uptake by four crop species differing widely in uptake ...
Ion-implanted poly-crystalline silicon (poly-Si), in combination with a tunnel oxide layer, is investigated as a carrier-selective passivating contact in c-Si solar cells based on an interdigitated back contact (IBC) architecture. The optimized poly-Si passivating contacts enable low interface recombination, resulting in implied VOC (iVOC) of about 720 mV and 704 mV for n-type and p-type, respe...
Here we report for the first time that bacterial blight of rice can be alleviated by silicon (Si) added. In both inoculated and uninoculated plants, shoot dry weight was significantly higher in the +Si plants than in the -Si plants. A soil-cultured trial showed that disease severity was 24.3% lower in the Si-amended plants than in the non-Si-amended plants. Plants that were switched from -Si to...
n-Si/Cd and n-Si/Pb Schottky junctions have been prepared by electrodeposition of Cd or Pb from acidic aqueous solutions onto H-terminated and CH3-terminated n-type Si 111 surfaces. For both nondegenerately nand degenerately n+doped H–Si 111 electrodes, Cd and Pb were readily electroplated and oxidatively stripped, consistent with a small barrier height b at the Si/solution and the Si/metal jun...
This text describes the FD-NU method and its implementation for the BENCHOP-project. 1 Spatial discretizations For example, under the Black-Scholes model European option prices u satisfy the PDE ut(s, t) + 1 2 σsuss(s, t) + rsus(s, t)− ru(s, t) = 0, s > 0, t ∈ [0, T ), (1) where σ and r are the volatility and interest rate, respectively. We employ quadratically refined grids defined by si = [( ...
Analysis of temporal evolution of quantum dot surface chemistry by surface-enhanced Raman scattering
Temporal evolution of surface chemistry during oxidation of silicon quantum dot (Si-QD) surfaces were probed using surface-enhanced Raman scattering (SERS). A monolayer of hydrogen and chlorine terminated plasma-synthesized Si-QDs were spin-coated on silver oxide thin films. A clearly enhanced signal of surface modes, including Si-Clx and Si-Hx modes were observed from as-synthesized Si-QDs as ...
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