نتایج جستجو برای: semiconductor quantum well
تعداد نتایج: 1823053 فیلتر نتایج به سال:
We report on magnetotransport measurements in two MBE-grown GaAs/AlGaAs superlattices formed by wide and narrow quantum wells and thin Si-doped barriers subject to tilted magnetic fields. It has been shown that illumination of the strongly coupled superlattice with narrow wells leads to reduction of its dimensionality from the 3D to 2D. The illumination-induced transition is revealed by remarka...
Quantum dots in semiconductor systems can be used to increase electron excitation in crystals by introducing intermediate bands betwen the main valence and conduction bands. Using the method of transfer matrices, we investigate how an electron interacts with a spherically symmetric potential well boundary. This result then can be generalized by creating a periodic lattice of similar potential w...
Inducing strong coupling Quantum dots, or artificial atoms, are being pursued as prospective building blocks for quantum information processing architectures. Communication with other, distant quantum dots requires strong coupling between photons and the electronic states of the dots. Mi et al. used double quantum dots defined in silicon and embedded in a superconducting cavity to achieve such ...
-Polarization mixing observed in the luminescence spectra from n-doped quantum wells is explained by the manyelectron processes involved in light emission.
The hole energy structure in boron delta-doped diamond is studied with the use of the 6 × 6 k · p Hamiltonian. The approach starts with a Thomas-Fermi-based description of the heavy, light and split-off hole states at the Brillouin zone center, and is extended to k 6= 0 points by using the obtained Γ-point solutions as a basis for the diagonalization that leads to the energy vs k relations corr...
Solid-state energy conversion technologies such as thermoelectric and thermionic refrigeration and power generation require materials with low thermal conductivity but good electrical conductivity, which are difficult to realize in bulk semiconductors. Nanostructures such as quantum wires and quantum wells provide alternative approaches to improve the solid-state energy conversion efficiency th...
An important mechanism in spintronics is spin-splitting induced by structure and/or bulk inversion asymmetry. These effects are frequently assumed to depend on two parameters usually denoted by and , respectively, and is assumed to be proportional to some average electric field. We here demonstrate that the spatial dependence of the electric field gives very important effects absent in simpler ...
We demonstrate continuous voltage control of the nonradiative transition lifetime in semiconductor heterostructures. The results were obtained by picosecond time-resolved experiments on biased SiGe valence band quantum well structures using a free electron laser. By varying the applied voltage, the intersubband hole relaxation times for quantum well structures were varied by a factor of 2 as th...
In this paper, based on the coupled-mode and carrier rate equations, a dynamic model and numerical analysis of a multi quantum well (MQW) chirped distributed feedback semiconductor optical amplifier (DFB-SOA) all-optical flip-flop is precisely derived. We have analyzed the effects of strains of QW and MQW and cross phase modulation (XPM) on the dynamic response, and rise and fall times of the ...
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