نتایج جستجو برای: semiconductor metal boundary
تعداد نتایج: 405674 فیلتر نتایج به سال:
The possibility of energy transfer from an excited molecule to a nearby semiconductor was recently proposed by Dexter [l] , who thus extended previous work [2-51 on energy transfer from an excited molecule to a metal Dexter’s idea was that energy produced in the form of excitons in a strongly absorbing organic coating could be transferred to a semiconductor producing free electrons and holes in...
This paper will present data manipulation and statistical analysis across multiple database types and architectures using JMP. These methodologies generate advanced statistical process control strategies to detect and rectify semiconductor production tool deterioration. Examples of data analysis and presentation via JMP will be used to highlight the importance of comprehendible statistical anal...
Integrated circuit resistors can be classified into three groups: 1.) semiconductor films, 2.) deposited metal films, and 3.) cermets (a mixture of metal and dielectric materials). Of these, only the first two have found widespread use in high frequency circuits. Semiconductor films can be fabricated by diffusion into a host semi-insulating substrate, by depositing a polysilcon layer, or by ion...
Noble metal Ag nanoparticles with unique surface plasmon resonance property have attracted much attention recently in the field of photocatalysis. Based on the advantages of Ag nanoparticles and semiconductor CeO2, a novel plasmonic photocatalyst Ag-AgCl/CeO2 was prepared with a facile route. The as-prepared samples were characterized using scanning and transmission electron microscopy, X-ray p...
In this paper, we discuss the role of adequate modelling tools in the development of nanoelectronic technology and devices, including both down-the-roadmap Complementary Metal-Oxide-Semiconductor (CMOS) technology and alternative nanodevices. Such tools can enable understanding of the relevant physical mechanisms on the one hand, and performance evaluation and optimization of device structures,...
We demonstrate lasing in Metal-Insulator-Metal (MIM) waveguides filled with electrically pumped semiconductor cores, with core width dimensions below the diffraction limit. Furthermore these waveguides propagate a transverse magnetic (TM0) or so called gap plasmon mode [1-4]. Hence we show that losses in sub-wavelength MIM waveguides can be overcome to create small plasmon mode lasers at wavele...
Nanoscale Schottky barrier MOSFETs (SBFETs) are explored by solving the two-dimensional Poisson equation self-consistently with a quantum transport equation. The results show that for SBFETs with positive, effective metal-semiconductor barrier heights, the on-current is limited by tunneling through a barrier at the source. If, however, a negative metal-semiconductor barrier height could be achi...
In vivo biosensing requires stable transistor operation in high-salt concentration bodily fluids while exhibiting impermeability to mobile alkali ions that would otherwise render the metal-oxide-semiconductor (MOS) threshold voltage to drift. Metal oxide semiconductor capacitor structures using Al2O3 as the gate dielectric were soaked in a sterile physiological buffer solution (PBS) up to 24 ho...
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