Free of tool wear, residual stress, and surface damage, electrochemistry plays a significant role in precision machining. We report here semiconductor polishing technique based on electrochemically induced chemical etching, which the concentration distribution electrogenerated etchant between electrode workpiece can be precisely controlled by pulse frequency potential applied to electrode. A th...

Widely tunable, Fourier-transform-limited pulses of terahertz (THz) radiation have been generated using (i) crystals of the highly nonlinear organic salt 4-N ,N -dimethylamino-4-N -methyl stilbazolium tosylate (DAST), (ii) zinc telluride (ZnTe) crystals, (iii) gallium phosphide (GaP) crystals, and (iv) low-temperature-grown gallium arsenide (LTG-GaAs) photomixers with THz spiral antennas. Outpu...

Solid-state power amplifiers at W-band (75 110 GHz) are attractive for the generation of local-oscillator (LO) power for super-heterodyne receivers operating at sub-millimetre wave frequencies, as needed for example in future space instruments for Earth observation. Apart from space applications there is a growing interest for these devices in for example millimetre wave imaging, communication ...

By using electron beam lithography, chemically assisted ion beam etching, and electroplating, we have fabricated high aspect ratio magnetic columns, 60–170 nm in diameter, embedded in an aluminum–gallium–oxide/gallium–arsenide @~Al0.9Ga0.1!2O3 /GaAs# substrate. In our previous work, we demonstrated storage of data in individual columns spaced 2 mm apart. Here the electroplated Ni columns are in...

Highly ordered gallium indium phosphide layers with the low bandgap have been successfully grown on the (100) GaAs substrates, the misorientation toward [01-1] direction, using the low-pressure metal organic chemical vapor deposition method. It is found that the optical properties of the layers are same as those of the disordered ones, essentially different from the ordered ones having two orie...

We investigate gate voltage dependence of electrical readout noise in high-speed rf reflectometry using gallium arsenide quantum dots. The fast Fourier transform spectrum from the real time measurement reflects build-in device and circuit including resonator amplifier. separate their spectral components by model analysis. Detail flicker is investigated compared to charge sensor sensitivity. poi...