The photovoltage produced by local illumination at the Schottky contacts of carbon nanotube field-effect transistors varies substantially with gate voltage. This is particularly pronounced in ambipolar nanotube transistors where the photovoltage switches sign as the device changes from p-type to n-type. The detailed transition through the insulating state can be recorded by mapping the open-cir...

We study the influence of the junction size in ferromagnet (FM)/semiconductor (SC) contacts on four-terminal nonlocal spin signals in SC-based lateral spin-valve (LSV) structures. When we use FM/Ge Schottky-tunnel junctions with relatively low resistance-area products, the magnitude of the nonlocal spin signal depends clearly on the junction size, indicating the presence of the spin absorption ...

We investigate the operation of dual-gate reconfigurable field-effect transistor (RFET) in programgate at drain (PGAD) and program-gate source (PGAS) configurations. To this end, silicon nanowire (SiNW) FETs are fabricated based on anisotropic wet chemical etching nickel silicidation yielding silicide-SiNW Schottky junctions drain. Whereas PGAD-configuration ambipolar is suppressed, switching d...

A novel synthetic strategy for fabricating Ag/Ag 10 Si 4 O 13 /GO Photocatalysts with Synergistic Effect of Plasma Resonance and Schottky Junction was proposed by accurately molecular (ion) scale assembly based on sol–gel method.

In this letter, we demonstrate 27% improvement in the buffer breakdown voltage of AlGaN/GaN high-electron mobility transistors (HEMTs) grown on Si substrate by using a new Schottky-drain contact technology. Schottky-drain AlGaN/GaN HEMTs with a total 2-μm-thick GaN buffer showed a threeterminal breakdown voltage of more than 700 V, while conventional AlGaN/GaN HEMTs of the same geometry showed ...

Germanium nanowire (GeNW)-positioned Schottky solar cell was fabricated by a solution process. A GeNW-containing solution was spread out onto asymmetric metal electrodes to produce a rectifying current flow. Under one-sun illumination, the GeNW-positioned Schottky solar cell yields an open-circuit voltage of 177 mV and a short-circuit current of 19.2 nA. Schottky and ohmic contacts between a si...

To clarify the mechanism of recently reported, ambipolar carrier injections into quasione-dimensional Mott insulators on which field-effect transistors are fabricated, we employ the one-dimensional Hubbard model attached to a tight-binding model for source and drain electrodes. To take account of the formation of Schottky barriers, we add scalar and vector potentials, which satisfy the Poisson ...

In an article by Sasaki and Yoshida (2000), we encountered Schottky groups of genus 2 as monodromy groups of the hypergeometric equation with purely imaginary exponents. In this paper we study automorphic functions for these Schottky groups, and give a conjectural infinite product formula for the elliptic modular function λ.