The Tevatron is a single beam pipe machine which contains both protons and anti-protons for HEP. This poses a challenge for measuring betatron tunes because of the possibility of contamination from the other species. In order to overcome this problem, stripline type structures are usually used because they are directional by construction or for the case of the 21.4 MHz Schottky system, a clever...

Schottky diode properties of semitransparent Ag(4 nm)/Au(4 nm) metal stack on In0.2Ga0.8N were investigated and defect characterization was performed using capacitance deep level transient (DLTS) and optical spectroscopy (DLOS). DLTS measurements made on the In0.2Ga0.8N Schottky diodes, which displayed a barrier height of 0.66 eV, revealed the presence of two deep levels located at Ec-0.39 eV a...

Using capacitance-voltage (C-V) and conductance-voltage (G/ω-V) measurements, the electrical properties of Cu/ n-InP Schottky diodes were investigated. The values of C and G/ω were found to decrease with increasing frequency. The presence of interface states might cause excess capacitance, leading to frequency dispersion. The negative capacitance was observed under a forward bias voltage, which...

The current–voltage (I–V) and capacitance–voltage (C–V) characteristics of Au/n-GaAs Schottky diodes on n-Ge substrates are investigated and compared with characteristics of diodes on GaAs substrates. The diodes show the non-ideal behavior of I–V characteristics with an ideality factor of 1.13 and barrier height of 0.735 eV. The forward bias saturation current was found to be large (3×10 A vs. ...

With the continuing interest in ATR, there is a need for high-resolution fully polarimetric data on tactical targets at all radar bands. Here we describe a newly developed system for acquiring W-band data with 1/16 scale models. The NGIC sponsored ERADS project capability for obtaining fully polarimetric ISAR imagery now extends from X to W band. The high-frequency terahertz compact radar range...

In this paper a monolithically integrated frequency tripler based on an antiparallel pair of Schottky diodes is presented. The tripler is designed for flat output power response and wide frequency range. With 2 mW of input power the tripler covers the frequency range of 75 – 140 GHz (bandwidth 60 %) delivering output power between -19.4 dBm and -14.7 dBm with an average efficiency of 1.1 %. The...

On a single ZnO nanowire (NW), we fabricated an inverter-type device comprising a Schottky diode (SD) and field-effect transistor (FET), aiming at 1-dimensional (1D) electronic circuits with low power consumption. The SD and adjacent FET worked respectively as the load and driver, so that voltage signals could be easily extracted as the output. In addition, NW FET with a transparent conducting ...

Silicon carbide (SiC) has long been shown to be one of the most promising materials for high-voltage power semiconductor devices. New device technologies and products have lead to an ever increasing size and variety of the markets addressed by SiC. The specific material properties and the new applications served by SiC devices give rise to specific reliability requirements, reaching beyond the ...

The paper concerns the problem of modelling d.c. characteristics of commercial SiC power Schottky diodes with self-heating taken into account. The electrothermal model of the investigated devices is proposed and experimentally verified. The evaluation of accuracy of the elaborated model has been performed by comparison of measured and calculated characteristics of selected SiC power Schottky di...