The effect of an etch-back step to control the cavity length within GaN-based microcavities formed between two dielectric Bragg mirrors was investigated using photoluminescence and reflectivity. The structures are fabricated using a combination of a laser lift-off technique to separate epitaxial III-N layers from their sapphire substrates and electron-beam evaporation to deposit silica/zirconia...

Gallium Nitride (GaN) HEMTs are the focus of intense research and development due to their potential for the realization of MMIC power amplifiers (PAs) with high gain and record levels of power delivery [1]. Much of the work in GaN HEMT development has been concentrated on performance demonstration on 2” SiC and Sapphire substrates. Multiple groups have demonstrated GaN HEMTs delivering record ...

This paper demonstrates the viability of wafer-level methods as a means of evaluating device reliability using special reliability test structures and process control monitors (PCM). The results presented illustrate how this methodology can be employed to rapidly and effectively assess the impact of process or material changes on over-all reliability. The wafer-level methodology provides a quic...

A mechanical quality factor of 1.1× 107 was obtained for the 199Hz bending vibrational mode in a monocrystalline sapphire fiber at 6K. Consequently, we confirm that pendulum thermal noise of cryogenic mirrors used for gravitational wave detectors can be reduced by the sapphire fiber suspension.

Continuous scaling of transistor geometries increases leakage current exponentially. This makes differentiating faulty and fault-free chips extremely difficult. The concept of wafer signature is proposed. A wafer signature is obtained by sorting all IDDQ readings on a wafer for a vector. A break or jump in the wafer signature is considered to indicate defective chips. The use of wafer signature...

PURPOSE To study the feasibility of black-blood contrast in native T1 mapping for reduction of partial voluming at the blood-myocardium interface. METHODS A saturation pulse prepared heart-rate-independent inversion recovery (SAPPHIRE) T1 mapping sequence was combined with motion-sensitized driven-equilibrium (MSDE) blood suppression for black-blood T1 mapping at 3 Tesla. Phantom scans were p...

Applied pressure in chemical mechanical polishing CMP is shared by the two-body pad–wafer and the three-body pad–abrasive– wafer contacts. The fraction of applied pressure transferred through the particle contacts is a significant factor as most of the material removal is due to abrasive particles trapped in the pad–wafer interface. In this work, the contact of a rough, deformable pad and a smo...

Introduction The semiconductor industry is now facing a major turning point in how to realize the next generation of large-scale integration. Recently 3D integration (3DI) using through-silicon via (TSV) has widely studied and wafer thinning has been considered to be a promising technology for enhancing system performance instead of conventional two-dimensional (2D) scaling due to technical and...