The constant demand to scale down transistors and improve device performance has led to material as well as process changes in the formation of IC interconnect. Traditionally, aluminum has been used to form the IC interconnects. The process involved subtractive etching of blanket aluminum as defined by the patterned photo resist. However, the scaling and performance demands have led to transiti...

Manuel Ramírez-Garrastacho and Rosa Esteban Instituto de Biología Funcional y Genómica/ Departamento de Microbiología y Genética. Consejo Superior de Investigaciones Científicas/Universidad de Salamanca, Salamanca, 37007, Spain Correspondence to: Rosa Esteban, Instituto de Biología Funcional y Genómica, Consejo Superior de Investigaciones Científicas, Avda. Campo Charro s/n, Salamanca, 37007, S...

Instituto Nacional de Neurociencias, Psicoanálisis y Salud Mental, Av. México No. Col. Hipódromo Condesa, Del. Cuauhtémoc, D.F., México. CA Biosistemas. Universidad Tecnológica de Corregidora, Carretera Estatal 413 Querétaro-Coroneo km 11.2 Qro. Tel. (442)4830070. Universidad Politécnica de Santa Rosa Jáuregui, Carretera Querétaro-San Luis Potosí, km 31+150, Parque Industrial Querétaro Sta. Ros...

G.A. Gellert1; V. Hill2; K. Bruner1; G. Maciaz1; L. Saucedo1; L. Catzoela1; R. Ramirez1; W.J. Jacobs1; P. Nguyen3; L. Patel4; S.L. Webster1 1CHRISTUS Health, Health Informatics, San Antonio, TX, United States; 2Baylor College of Medicine, Pediatrics, San Antonio, TX, United States; 3CHRISTUS Santa Rosa Westover Hills Hospital, San Antonio, TX, United States; 4CHRISTUS Santa Rosa Medical Center,...

Lateral electrochemical metallization (ECM) cells are fabricated with a combined spacer/damascene process. The process allows the realization of nanoscale geometrical distances between two electrodes independent lithography. Such lateral ECM an essential part in reconfigurable interconnect system that may yield strongly increased connectivity artificial neural networks. show memristive properti...

The electromigration short-length effect in dual-damascene Cu interconnects has been investigated through experiments on lines of various lengths (L), being stressed at a variety of current densities (j), and using a technologically realistic three-level structure. This investigation represents a complete study of the short-length effect after a well-developed dual-damascene Cu process. Lifetim...