Polypropylene (PP) powders are coated with silica nanoparticles in a fluidized bed to improve the flow behavior of and processability powder fusion. The produced situ via dusty plasma-enhanced chemical vapor deposition (PECVD) an atmospheric-pressure Ar/O2 plasma jet fixed at distributor plate bed. Hexamethyldisiloxane is used as precursor nanoparticles. influence oxygen concentration gas numbe...

Highly customized and free-formed products in flexible hybrid electronics (FHE) require direct pattern creation such as inkjet printing (IJP) to accelerate product development. In this work, we demonstrate the growth of graphene on Cu ink deposited polyimide (PI) by means plasma-enhanced chemical vapor deposition (PECVD), which provides simultaneous reduction, sintering, passivation further red...

in  this  study  we  determined  the  frequency,  sensitivity  and  specificity  of  anti  cyclic citrullinated peptides (anti-ccp) igg antibody, total rheumatoid factor (rf-t), and rf isotypes in iranian patients with rheumatoid arthritis (ra) and their association with age, clinical and serological parameters. anti-ccp and rf-t and rf isotypes level were measured in 418 patients and 399 healt...

Low-pressure plasmas offer a unique possibility of confinement, control, and fine tailoring of particle properties. Hence, dusty plasmas have grown into a vast field, and new applications of plasma-processed dust particles are emerging. During the deposition of thin amorphous films onto melamine formaldehyde (MF) microparticles in a C2H2 plasma, the generation of nanosized carbon particles was ...

A technique for determining trap densities as a function of energy in semiconductors is presented. Through differential capacitance measurements, trap states can be accurately measured and profiled within the bandgap as a function of energy. Measurements were carried out on samples made at the Microelectronic Research Center at Iowa State University. Hydrogen profiled nano-crystalline silicon s...

We have developed a new process to produce ultra-thin crystalline silicon films with thicknesses in the range of 0.1−1 μm on flexible substrates. A crystalline silicon wafer was cleaned by SiF4 plasma exposure and without breaking vacuum, an epitaxial film was grown from SiF4, H2 and Ar gas mixtures at low substrate temperature (Tsub ≈ 200 ◦C) in a standard RF PECVD reactor. We found that H2 di...

In this work, we present new results on the plasma processing and structure of hydrogenated polymorphous silicon (pm-Si:H) thin films. pm-Si:H thin films consist of a low volume fraction of silicon nanocrystals embedded in a silicon matrix with medium range order, and they possess this morphology as a significant contribution to their growth comes from the impact on the substrate of silicon clu...

In this paper we investigate influence of radio frequency plasma enhanced chemical vapor deposition (RF PECVD) process parameters, which include gas flows, pressure and temperature, as well as a way of sample placement in the reactor, on optical properties and deposition rate of silicon nitride (SiNx) thin films. The influence of the process parameters has been determined using Taguchi's orthog...