In this paper, a thermally stable nickel silicide technology using the co-sputtering of nickel and titanium atoms capped with TiN layer is proposed for nano-scale metal oxide semiconductor field effect transistor (MOSFET) applications. The effects of the incorporation of titanium ingredient in the co-sputtered Ni layer are characterized as a function of Ti sputtering power. The difference betwe...

Current methods for forming junctions in the source and drain regions of complementary metaloxide semiconductor (CMOS) transistor circuits use low-energy ion implantation and rapid thermal annealing (RTA). Spike annealing, with fast ramping and short dwell time at maximum temperature, has been shown to be advantageous for shallow-junction formation. Diffusion and electrical activation of implan...

We have studied the effects of placing Co/Pt multilayers on dysprosium-iron-garnet doped with bismuth and aluminum. The garnet was deposited by RF-magnetron sputtering and crystallized by rapid thermal annealing. The Co/Pt multilayers were then deposited by DC-magnetron sputtering. The garnet thickness was held constant at lOOOA while the ColPt multilayer had the form of [3ACo/9APt], with n ran...

A new method of forming low-resistance, ultra-shallow p+ junctions for improved PMOSFET short-channel performance is presented. Ultra-shallow Sio,8Geo,2/Si heterojunctions self-aligned to the gate electrode are formed by Ge ion implantation. Afterwards, sidewall spacers are formed and a deep B implant is performed to form the deep source/drain (S/D) contact regions. Upon post-implant annealing,...

L-cysteine–capped Mn-doped ZnS quantum dots (QDs) were used for the determination of glutamic acid in foodstuffs. This method is based on measurement of the quenching of the phosphorescence intensity of the QDs after interacting with glutamic acid. A linear response was observed from 50 to 500 ng mL−1 glutamic acid with a limit of detection of 6.79 ng mL−1 . Room temperature phosphorescence (RT...

InGaAsP/InP multiple quantum wells with quantum well intermixing (QWI) have been prepared by Impurity-Free Vacancy Disordering (IFVD). The luminescent characteristics were investigated using photoluminescence (PL) and photoreflectance (PR), from which the band gap blueshift was observed. Si3N4, SiO2 and SOG (spin on glass) were used for the dielectric layer to enhance intermixing from the outdi...

In this work, the flatband voltage shift of SiO2 embedded with silicon nanocrystal (nc-Si) annealed at different annealing temperature, different annealing time and under different temperature ramping rates are being investigated. The Si-ions are implanted into the SiO2 with very low energy. The instability of the flatband voltage shift is due to fact that there are remaining Si ions in the SiO...

We report a new metallization process for achieving low resistance ohmic contacts to molecular beam epitaxy grown n-GaN (--Or7 cme3) using an Ah% bilayer metallization scheme. Four different thin-film contact metallizations were compared during the investigation, including Au, Al, Ti/Au, and Ti/Al layers. The metals were first deposited via conventional electron-beam evaporation onto the GaN su...

A silicon dioxide (SiO2) electret passivates the surface of crystalline silicon (Si) in two ways: (i) when annealed and hydrogenated, the SiO2–Si interface has a low density of interface states, offering few energy levels through which electrons and holes can recombine; and (ii) the electret’s quasipermanent charge repels carriers of the same polarity, preventing most from reaching the SiO2–Si ...

In this work, different dielectric caps were deposited on the GaAs/AlGaAs quantum well ~QW! structures followed by rapid thermal annealing to generate different degrees of interdiffusion. Deposition of a layer of GaxOy on top of these dielectric caps resulted in significant suppression of interdiffusion. In these samples, it was found that although the deposition of GaxOy and subsequent anneali...