We unveil the role of bound-to-continuum photoexcitation of carriers as a relevant process that affects the performance of quantum dot (QD) lasers. We present the response of an InAs/InGaAs QD laser to a sub-band gap pump, showing an unexpected depletion of the emitted photons. We relate this observation with carrier photoexcitation through additional transmission and photocurrent measurements....

The optical characteristics of the first laser diodes fabricated from a single-InAs quantum-dot layer placed inside a strained InGaAs QW are described. The saturated modal gain for this novel laser active region is found to be 9–10 cm 1 in the ground state. Room temperature threshold current densities as low as 83 A/cm2 for uncoated 1.24m devices are measured, and operating wavelengths over a 1...

A challenge for nonlinear imaging in living tissue is to maximize the total fluorescent yield from each fluorophore. We investigated the emission rates of three fluorophores-rhodamine B, a red fluorescent protein, and CdSe quantum dots-while manipulating the phase of the laser excitation pulse at the focus. In all cases a transform-limited pulse maximized the total yield to insure the highest s...

This article describes a calculation of the spontaneous emission limited linewidth semiconductor laser consisting hybrid or heterogeneously integrated, silicon and III–V intracavity components. Central to approach are a) description multi-element cavity in terms composite laser/free-space eigenmodes, b) use multimode theory treat mode competition multiwave mixing, c) incorporation quantum-optic...

Impurity free vacancy disordering induced highly intermixed InAs/ GaAs quantum-dot lasers are reported with high internal quantum efficiency (>89%). The lasers are shown to retain the device characteristics after intermixing and emitting in the important wavelength of ∼1070–1190 nm. The non-coated facet Fabry-Pērot post-growth wavelength tuned lasers exhibits high-power (>1.4W) and high-gain (∼...

High pulse repetition rate (≥ 10 GHz) diode-pumped solid-state lasers, modelocked using semiconductor saturable absorber mirrors (SESAMs) are emerging as an enabling technology for high data rate coherent communication systems owing to their low noise and pulse-to-pulse optical phase-coherence. Quantum dot (QD) based SESAMs offer potential advantages to such laser systems in terms of reduced sa...

In this work we present numerical results concerning a time-delayed reservoir computing scheme, where its single nonlinear node, is Quantum-Dot spin polarized Vertical Cavity Surface-Emitting Laser (QD s-VCSEL). The proposed photonic neuromorphic exploits the complex temporal dynamics of multiple energy states in quantum dot materials and uses emission from two discrete wavebands polarization s...

The energy states in semiconductor quantum dots are discrete as in atoms, and quantum states can be coherently controlled with resonant laser pulses. Long coherence times allow the observation of Rabi flopping of a single dipole transition in a solid state device, for which occupancy of the upper state depends sensitively on the dipole moment and the excitation laser power. We report on the rob...

Abstract Random signal generation in a ring resonator laser is achieved with quantum-dot semiconductor optical amplifiers. The lasing spectra were obtained over wide range of wavelength, and the individual longitudinal modes acted as channels for random number generation.

Coherence in light-matter interaction is a necessary ingredient if light is used to control the quantum state of a material system. Coherent effects are firmly associated with isolated systems kept at low temperature. The exceedingly fast dephasing in condensed matter environments, in particular at elevated temperatures, may well erase all coherent information in the material at timescales shor...