Electron-phonon coupling is a major decoherence mechanism, which often causes scattering and energy dissipation in semiconductor electronic systems. However, this electron-phonon coupling may be used in a positive way for reaching the strong or ultra-strong coupling regime in an acoustic version of the cavity quantum electrodynamic system. Here we propose and demonstrate a phonon cavity for sur...

The structural, electronic, transport and optical properties of black phosphorus/MoS2 (BP/MoS2) van der Waals (vdw) heterostructure are investigated by using first principles calculations. The band gap of BP/MoS2 bilayer decreases with the applied normal compressive strain and a semiconductor-to-metal transition is observed when the applied strain is more than 0.85 Å. BP/MoS2 bilayer also exhib...

The combination of semiconductor quantum well structures and strongly piezoelectric crystals leads to a system in which surface acoustic waves with very large amplitudes can interact with charge carriers in the well. The surface acoustic wave induces a dynamic lateral superlattice potential in the plane of the quantum well which is strong enough to spatially break up a two-dimensional electron ...

in this paper the active vibration control of a four-story shear frame instrumented with piezoelectric actuators is presented. the piezoelectric actuators are hosted on the columns in two manners and the produced controlling forces by actuators are considered in the equation of motion. the smart structure modeling and control design is carried out using matlab software in state space form. subs...

Abstract In this paper, we propose a specific two-layer model consisting of functionally graded (FG) layer and piezoelectric semiconductor (PS) layer. Based on the macroscopic theory PS materials, effects brought about by attached FG piezotronic behaviors homogeneous n-type fibers PN junctions are investigated. The semi-analytical solutions electromechanical fields obtained expanding displaceme...

Quantifying and characterising atomic defects in nanocrystals is difficult and low-throughput using the existing methods such as high resolution transmission electron microscopy (HRTEM). In this article, using a defocused wide-field optical imaging technique, we demonstrate that a single ultrahigh-piezoelectric ZnO nanorod contains a single defect site. We model the observed dipole-emission pat...

We demonstrate a compact, diode-pumped Nd:GdVO4 laser with a repetition rate of 9.66 GHz and 0.5-W average output power. The laser is passively mode locked with a semiconductor saturable absorber mirror (SESAM), yielding 12-ps-long sech2-shaped pulses. For synchronization of the pulse train to an external reference clock, the SESAM is mounted on a piezoelectric transducer. With an electronic fe...

We report the design and development of a piezoelectric sample rotation system, and its integration into an Oxford Instruments Kelvinox 100 dilution refrigerator, for orientation-dependent studies of quantum transport in semiconductor nanodevices at millikelvin temperatures in magnetic fields up to 10 T. Our apparatus allows for continuous in situ rotation of a device through >100° in two possi...

In the present work, the deposition and characterization of dielectric, piezoelectric, semiconductor and conductor films by RF diode / RF magnetron sputtering process for applications in MEMS fabrication have been reported. Thin films of silicon dioxide, silicon nitride, amorphous silicon, zinc oxide and lanthanum doped lead zirconate titanate (PLZT) were prepared by RF sputtering process and e...