نتایج جستجو برای: optoelectronic device

تعداد نتایج: 684827  

2011
Roana Melina de Oliveira Hansen Morten Madsen Jakob Kjelstrup-Hansen Horst-Günter Rubahn

Organic nanostructures made from organic molecules such as para-hexaphenylene (p-6P) could form nanoscale components in future electronic and optoelectronic devices. However, the integration of such fragile nanostructures with the necessary interface circuitry such as metal electrodes for electrical connection continues to be a significant hindrance toward their large-scale implementation. Here...

Journal: :Nano letters 2016
Mingsheng Long Erfu Liu Peng Wang Anyuan Gao Hui Xia Wei Luo Baigeng Wang Junwen Zeng Yajun Fu Kang Xu Wei Zhou Yangyang Lv Shuhua Yao Minghui Lu Yanfeng Chen Zhenhua Ni Yumeng You Xueao Zhang Shiqiao Qin Yi Shi Weida Hu Dingyu Xing Feng Miao

van der Waals junctions of two-dimensional materials with an atomically sharp interface open up unprecedented opportunities to design and study functional heterostructures. Semiconducting transition metal dichalcogenides have shown tremendous potential for future applications due to their unique electronic properties and strong light-matter interaction. However, many important optoelectronic ap...

Journal: :Nature nanotechnology 2015
Hongtao Yuan Xiaoge Liu Farzaneh Afshinmanesh Wei Li Gang Xu Jie Sun Biao Lian Alberto G Curto Guojun Ye Yasuyuki Hikita Zhixun Shen Shou-Cheng Zhang Xianhui Chen Mark Brongersma Harold Y Hwang Yi Cui

The ability to detect light over a broad spectral range is central to practical optoelectronic applications and has been successfully demonstrated with photodetectors of two-dimensional layered crystals such as graphene and MoS2. However, polarization sensitivity within such a photodetector remains elusive. Here, we demonstrate a broadband photodetector using a layered black phosphorus transist...

Journal: :Nanoscale 2014
Sheng-Bo Wang Ruei-San Chen Shoou Jinn Chang Hsieh-Cheng Han Ming-Shien Hu Kuei-Hsien Chen Li-Chyong Chen

We report the optoelectronic device properties of individual Au-silica hybrid nanowires prepared by microwave plasma enhanced chemical vapor deposition. Due to the surface plasmon resonance (SPR) effect the photo-responsivity peak strongly depends on the shape of the embedded gold nanostructures in the silica nanowire in which the shape can be modified by controlling the growth time of Au-silic...

Journal: :Journal of Materials Chemistry C 2022

An ultrahigh photosensitive diode was developed using a Cu-doped CeO 2 thin film through spray pyrolysis processing, which has made unique contribution in the field of optoelectronic device fabrication process.

1999
Feng Qian Guoqiang Li Liren Liu

Genetic algorithms are the search and optimization methods based on the principles of natural evolution. An optoelectronic implementation is proposed in this paper to realize a genetic algorithm. Based on binary logic operations, crossover and mutation of a population of chromosomes can be carried out in parallel, which is very suitable for optical implementation. An electron trapping device is...

2011
T. Hasan V. Scardaci P. H. Tan F. Bonaccorso A. G. Rozhin Z. Sun

Polymer composites are an attractive near-term means to exploit the unique properties of single wall carbon nanotubes and graphene. This is particularly true for composites aimed at photonic and optoelectronic applications, where a number of devices have already been demonstrated. These include transparent conductors, saturable absorbers, electroluminescent and photovoltaic devices. Here, we pr...

2012
Maxwell C. Kum Hyunsung Jung Nicha Chartuprayoon Wilfred Chen Ashok Mulchandani Nosang V. Myung

Cadmium telluride nanoribbons were synthesized electrochemically and formed into nanodevices using lithographically patterned nanowire electrodeposition (LPNE) that integrated synthesis and device fabrication together. By controlling the composition of the CdTe nanoribbons via adjusting the electrodeposition potential, electrical properties (i.e., electrical resistivity and field-effect transis...

2008
Arash Jamshidi P. James Schuck Peter J. Pauzauskie Aaron T. Ohta Hsan-Yin Hsu Justin Valley Peidong Yang Ming C. Wu

We demonstrate in-situ Raman measurements of individual silicon nanowires (100 nm diameter, 10-20 m in length) which are trapped using optoelectronic tweezers (OET). OCIS codes: (300.0300) Spectroscopy, Raman; (140.7010) Trapping. Optoelectronic tweezers (OET) is a dynamic, non-invasive optical manipulation tool that works based on the principle of light-induced dielectrophoretic force. It is c...

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