نتایج جستجو برای: non linear gan

تعداد نتایج: 1714688  

2012
Aniruddha Konar Amit Verma Tian Fang Pei Zhao Raj Jana Debdeep Jena

Compared to the intense research focus on the optical properties, the transport properties in non-polar and semi-polar III-nitride semiconductors remain relatively unexplored to date. The purpose of this paper is to discuss charge-transport properties in non-polar and semi-polar orientations of GaN in a comparative fashion to what is known for transport in polar orientations. A comprehensive ap...

Journal: :Journal of Economic Theory 2005

Journal: :CoRR 2018
Peipei Li Yibo Hu Qi Li Ran He Zhenan Sun

Age progression/regression is a challenging task due to the complicated and non-linear transformation in human aging process. Many researches have shown that both global and local facial features are essential for face representation [1], but previous GAN based methods mainly focused on the global feature in age synthesis. To utilize both global and local facial information, we propose a Global...

2000
C. J. Rawn J. Chaudhuri

Lattice constants of single phase gallium nitride were measured from room temperature to 1273 IS using high temperature x-ray powder diffraction. The data were used to calculate the epitaxial misfits using the epitaxial relationships, GaN(OOOl)]]A.1203(OO01) and GaN[10i0]]]A120s[1 1201 and GaN(OOOl#iH-SiC(OOO1) and GaN[lOiO]]]6H-SiC[lOiO], reported in the literature. Using the above relationshi...

2012
A. Haldi A. Sharma W. J. Potscavage B. Kippelen

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2012
Li Yuan Weizhu Wang Kean Boon Lee Haifeng Sun Susai Lawrence Selvaraj Guo - Qiang

In this work, the physical based device model of AlGaN/GaN high electron mobility transistors (HEMTs) has been established and the corresponding device operation behavior has been investigated also by using Sentaurus TCAD from Synopsys. Advanced AlGaN/GaN hetero-structures with GaN cap layer and AlN spacer have been considered and the GaN cap layer and AlN spacer are found taking important role...

2015
N Fe I. Rajani Moneesha Fernandes

This paper presents experimental analysis and results of GaN (being a III-V semiconductor) doped with Ferrite elements synthesized using Sol-Gel technique which are carried out at National Chemical Laboratory, Pune Maharashtra. The GaN is employed as dopant for x=1 and x=5, in the formula Ga(2x) N Fe2(49-x) O3 . A non-spinel ferrite system ( Fe2 O3) is chosen for our study. The XRD (Structural)...

2012
S. Boninelli G. Impellizzeri A. Alberti F. Priolo F. Cristiano C. Spinella

Related Articles The origin of 0.78eV line of the dislocation related luminescence in silicon J. Appl. Phys. 112, 063528 (2012) Growth regimes during homoepitaxial growth of GaN by ammonia molecular beam epitaxy J. Appl. Phys. 112, 054903 (2012) Defect microstructural evolution in ion irradiated metallic nanofoils: Kinetic Monte Carlo simulation versus cluster dynamics modeling and in situ tran...

2016
Xiao-ling Chi Huan-ming Xiao Yu-bao Xie Gao-shu Cai Jun-min Jiang Guang-jun Tian Mei-jie Shi Shu-duo Wu Peng-tao Zhao Hui-jun Chen

BACKGROUND Prednisone plus azathioprine is considered the mainstay of therapy in the current recommendations for autoimmune hepatitis (AIH). However, it does not provide good benefits for AIH patients because of its serious side effects. Therefore, more and more AIH patients prefer to seek for traditional Chinese medicine (TCM) to manage their symptoms and reduce the side effects of steroids in...

2012
Jun Huang Ke Xu Ying Min Fan Mu Tong Niu Xiong Hui Zeng Jian Feng Wang Hui Yang

Elasto-plastic mechanical deformation behaviors of c-plane (0001) and nonpolar GaN single crystals are studied using nanoindentation, cathodoluminescence, and transmission electron microscopy. Nanoindentation tests show that c-plane GaN is less susceptible to plastic deformation and has higher hardness and Young's modulus than the nonpolar GaN. Cathodoluminescence and transmission electron micr...

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