In this paper Broadband Reconfigurable low Noise Amplifier for Multiband Application is presented. Low noise amplifier is versatile demanded in modern technology, technology demanded amplifier have less reflection and more rejection of noise, in this paper presented differential cross feedback topology and feedback technique for designing of Broadband Reconfigurable low Noise Amplifier, the req...

Zero-IF receiver has some advantages, such as small factor, low cost and easily integrated on a chip. They make it competitive of RF receivers. However, DC Offset and flicker noise, etc., have profound effects in zero-IF receiver, which need not be considered in super-heterodyne receiver. Following a major study of flicker noise, possible solutions are given, especially those based on the passi...

Op-amp in loop filter While the cases using the passive loop filter (no op-amp) are simply a matter of circuit analysis, the case using the active filter requires some explanation. This case will only be described here; the accompanying analysis can be found in the supporting MathCad documents. With the op-amp in the loop, and the filter configuration shown in Figure 1, four different noise sou...

Low noise amplifier is the front end block of radio-frequency receiver system. Its design required various characteristics such as power gain, noise figure, insertion losses and power consumption. In this paper we have proposed a single stage low noise amplifier design with high gain and low noise using inductive source degeneration topology for frequency range of 3 GHz to 7 GHz and also use th...

This paper presents a 1.2V 60GHz zero-IF transceiver fabricated in a 65nm CMOS process with a digital back-end. The chip includes a receiver with 14.7dB gain, a low 5.6dB noise figure, a 60GHz LO distribution tree, a 64GHz static frequency divider, and a direct BPSK modulator operating over the 55-65GHz band at data rates exceeding 3.5Gb/s. The chip consumes 374mW (232mW) from 1.2V (1.0V) and o...

The performance enhancement of a SiGe:C HBT for RF/IF applications is described for Motorola’s 0.35μm and 0.18μm BiCMOS technologies. Cutoff frequencies (fT) have been improved from 50GHz to 78/84GHz (0.35/0.18μm BiCMOS), with a reduction in minimum noise figure (NF) from 0.7dB to 0.3dB. Improvements occurred through the optimization of the intrinsic collector and base dopant profiles, extrinsi...

This report describes the design of a two-stage broadband low-noise-amplifier (LNA) for the frequency range from 3 GHz to 9 GHz, using GaAs MESFETs with an ft of 20 GHz. The passive components were implemented with microstrips. In the frequency band of operation, the achieved noise figure (NF) is within 0.5 dB from the minimum NF of a single transistor, the power gain is 15 dB, flat within 1 dB...

A cascode CMOS low noise amplifier (LNA) is presented along with the used design methodology and measurement results. The LNA works at 2.4 GHz with 14.5 dB voltage gain and 2.8 dB simulated noise figure (NF). Powered from a 1.8 V supply, the core measured current consumption is 2.76 mA. An output buffer was designed to match a 50 Ω load and its current consumption is 5.5 mA. The technology used...

Supplementary Figure 1 Behavioral results from additional psychophysical tests Supplementary Figure 2 Percent signal change and composite data Supplementary Figure 3 Simulation results – effects of signal to noise ratios and cue reliability Supplementary Figure 4 Simulation results – effects of spatial organization Supplementary Figure 5 Subjective assessment of eye vergence results Supplementa...

A machine learning framework predicting pump powers and noise figure profile for a target distributed Raman amplifier gain is experimentally demonstrated. We employ single-layer neural network to learn the mapping from profiles figures. The obtained results show highly-accurate designs predictions, with maximum error on average of ~0.3dB. This provides comprehensive characterization thus valuab...