AbstructThe etch rates for 317 combinations of 16 materials (single-crystal silicon, doped, and undoped polysilicon, several types of silicon dioxide, stoichiometric and silicon-rich silicon nitride, aluminum, tungsten, titanium, TVW alloy, and two brands of positive photoresist) used in the fabrication of microelectromechanical systems and integrated circuits in 28 wet, plasma, and plasmaless-...

The phenomena that accompany the growth of aluminum nitride (AlN) by metal-organic molecular beam epitaxy with trimethylaluminum and ammonia as sources of aluminum and nitrogen, respectively, have been systematically investigated. Optimizing the growth temperature, flux ratios, and the ammonia injector temperature, we obtained an efficient growth with a rate of 500 nm/h and a low consumption of...

Aluminum nitride (AlN) is an emerging material for integrated quantum photonics with its excellent linear and nonlinear optical properties. In particular, second-order susceptibility $\chi^{(2)}$ allows single-photon generation. We have grown AlN thin films on silicon via reactive DC magnetron sputtering. The been characterized using X-ray diffraction, reflectometry, atomic force microscopy, sc...

Piezoelectric materials have attracted considerable attention over the last two decades because many technologies utilize their core properties of piezoelectric materials. Previous applications consisted bulk structures; however, a shift towards better performance and more simplified compatible fabrication method are required. Aluminum nitride (AlN) is material that fits these criteria; it has ...

This manuscript demonstrates ferroelectricity in B-substituted AlN thin films and a complementary set of first-principles calculations to understand their structure-property relationships. ${\mathrm{Al}}_{1--x}{\mathrm{B}}_{x}\mathrm{N}$ are grown by dual-cathode reactive magnetron sputtering on $(110)\mathrm{W}/(001){\mathrm{Al}}_{2}{\mathrm{O}}_{3}$ substrates at 300\ifmmode^\circ\else\textde...

We present microwave ~30 GHz! measurements on aluminum superconducting hot-electron bolometer ~HEB! mixers. Aluminum HEB mixers have a lower superconducting transition temperature than niobium and niobium nitride devices, and are predicted to have improved sensitivity and require less local oscillator power. The devices studied consist of a narrow superconducting aluminum microbridge with conta...