In this work the effects of various methods of agitation on the properties of electroless Ni-P-MoS2 composite coatings were investigated. Magnetic stirring as well as purging the solution with gas (Air, Oxygen, Nitrogen) were used. Plating rate, chemical composition, MoS2 distribution, and hardness of the deposit were measured. Topography of coating was studied with metallography and scanning e...

The optoelectronic characteristics of molybdenum disulfide (MoS2)/ZnO flexible photodetectors are investigated. A red-shift effect and improved photocurrent properties of the flexible devices are demonstrated. MoS2 doping improved the photocurrent properties and conductivity. The photocurrent/dark current ratios of pure ZnO and MoS2/ZnO flexible photodetectors were 10(3) and 10(4), respectively...

Monolayer molybdenum disulfide (MoS2) has become a promising building block in optoelectronics for its high photosensitivity. However, sulfur vacancies and other defects significantly affect the electrical and optoelectronic properties of monolayer MoS2 devices. Here, highly crystalline molybdenum diselenide (MoSe2) monolayers have been successfully synthesized by the chemical vapor deposition ...

We report chemically exfoliated MoS2 nanosheets with a very high concentration of metallic 1T phase using a solvent free intercalation method. After removing the excess of negative charges from the surface of the nanosheets, highly conducting 1T phase MoS2 nanosheets exhibit excellent catalytic activity toward the evolution of hydrogen with a notably low Tafel slope of 40 mV/dec. By partially o...

In this article, we study the properties of metal contacts to single-layer molybdenum disulfide (MoS2) crystals, revealing the nature of switching mechanism in MoS2 transistors. On investigating transistor behavior as contact length changes, we find that the contact resistivity for metal/MoS2 junctions is defined by contact area instead of contact width. The minimum gate dependent transfer leng...

High mobility channel thin-film-transistor (TFT) is crucial for both display and future generation integrated circuit. We report a new metal-oxide TFT that has an ultra-thin 4.5 nm SnO2 thickness for both active channel and source-drain regions, very high 147 cm(2)/Vs field-effect mobility, high ION/IOFF of 2.3 × 10(7), small 110 mV/dec sub-threshold slope, and a low VD of 2.5 V for low power o...

We report on the evolution of the thickness-dependent electronic band structure of the two-dimensional layered-dichalcogenide molybdenum disulfide (MoS2). Micrometer-scale angle-resolved photoemission spectroscopy of mechanically exfoliated and chemical-vapor-deposition-grown crystals provides direct evidence for the shifting of the valence band maximum from Γ to K, for the case of MoS2 having ...

We report the influence of uniaxial tensile mechanical strain in the range 0-2.2% on the phonon spectra and bandstructures of monolayer and bilayer molybdenum disulfide (MoS2) two-dimensional crystals. First, we employ Raman spectroscopy to observe phonon softening with increased strain, breaking the degeneracy in the E' Raman mode of MoS2, and extract a Grüneisen parameter of ~1.06. Second, us...

Layered two-dimensional (2D) inorganic transition-metal dichalchogenides (TMDs) have attracted great interest as a result of their potential application in optoelectronics, catalysis, and medicine. However, methods to functionalize and process such 2D TMDs remain scarce. We have established a facile route towards functionalized layered MoS2 . We found that the reaction of liquid-exfoliated 2D M...

Theoretical calculation and experimental measurement have shown that twin grain boundary (GB) of molybdenum disulphide (MoS2) exhibits extraordinary effects on transport properties. Precise transport measurements need to verify the transport mechanism of twin GB in MoS2. Here, monolayer molybdenum disulphide with a twin grain boundary was grown in our developed low-pressure chemical vapor depos...