نتایج جستجو برای: metal vapor lamp
تعداد نتایج: 240016 فیلتر نتایج به سال:
A novel digital control theory is proposed for the metal halide lamp electronic ballast used for the projector. The resonant ignition with LCSCP mode is adopted here, an adaptive digital control method for ignition is proposed to overcome the problem of the deviation for the passive components. A simple power closed loop method is proposed to make the lamp power constant without the power over ...
In this paper, based on numerical study using Finite Difference Time Domain method, we discuss two possible illumination schemes utilizing surface plasmon effects to achieve high density sub-100 nm scale photolithography by using ultraviolet light from a mercury lamp. In the illumination schemes discussed in this paper, a thin film layer, named as shield layer, is placed in between a photoresis...
Recently one dimensional (1-D) nanostructured metal-oxides have attracted much attention because of their potential applications in gas sensors. 1-D nanostructured metal-oxides provide high surface to volume ratio, while maintaining good chemical and thermal stabilities with minimal power consumption and low weight. In recent years, various processing routes have been developed for the synthesi...
The tunneling magnetoresistance sTMRd of thin dielectric tunnel barriers that are sandwiched between pairs of ferromagnetic metal thin films is highly sensitive to the barrier layer atomic scale thickness, the uniformity in thickness, and the composition. Widely used AlOx barriers are formed by the oxidation of 1–2 nm thick aluminum layers vapor deposited onto one of the ferromagnetic metal ele...
We describe the design of an instrument that can fully implement a new nanopatterning method called ice lithography, where ice is used as the resist. Water vapor is introduced into a scanning electron microscope (SEM) vacuum chamber above a sample cooled down to 110 K. The vapor condenses, covering the sample with an amorphous layer of ice. To form a lift-off mask, ice is removed by the SEM ele...
To meet the stringent requirements of interconnect metallization for sub-32 nm technologies, an unprecedented level of flux and energy control of film forming species has become necessary to further advance ionized physical vapor deposition technology. Such technology development mandates improvements in methods to quantify the metal ion fraction, the gas∕metal ion ratio, and the associated ion...
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