A monolithic 5 GHz image reject mixer using a 0.5-μm GaAs MESFET technology is designed and simulated. The Mixer exhibits a 13.56 dB down-conversion gain, a SSB (Single SideBand) noise figure of 11.90 dB, an input IP3 (third order intercept point) of –3.73 dBm and a P1dB (1-dB compression point) of –11.0 dBm. The critical issue in the image reject mixer is the phase accuracy and magnitude balan...

A two-dimensional analytical model for the potential distribution along the bottom channel of the fully depleted region of dual material gate (DMG) SOI MESFET is presented. The potential distribution is modeled by solving the Poisson equation with proper boundary conditions. The model for the potential distribution is extended to derive an analytical expression for the threshold voltage. The ac...

and test fucture. The light generated by a high speed 800nm wavelength transmitter was coupled to the detectors using a singlemode fibre. The level of optical power was adjusted by a variable optical attenuator. Fig. 3 shows the eye diagram of a 2.4Gbit/s input current to the laser transmitter and the received eye diagram at 1V9 error rate. The bit error rate (BER) has been measured against inc...

A finite difference upwind discretization scheme in two dimensions is presented in detail for the transient simulation of the highly coupled non-linear partial differential equations of the full hydrodynamic model, providing thereby a practical engineering tool for improved charge carrier transport simulations at high electric fields and frequencies. The discretization scheme preserves the cons...

This paper describes a procedure to extract major SPICE parameters of a field-effect transistor (JFET, MESFET or MOSFET) from its transfer and output i-v characteristics while introducing a technique that facilitates an accurate measurement of these characteristics with the help of standard bench-top electronic test equipment in a computer-integrated-electronics laboratory. The measurement tech...

Designing high-performance semiconductor devices is a complex optimization problem, which is characterized by multiple and, often, conflicting objectives. In this research work, we introduce a multi-objective optimization design approach based on the Bi-Objective Mesh Adaptive Direct Search ( BiMADS) algorithm. First, we assess the performance of the algorithm on the design of a n+ − n− n+ sili...

In this paper an efficient procedure for determination of small-signal and noise behavior of microwave transistors for various bias conditions is proposed. An empirical transistor noise model based on an equivalent circuit (improvement of Pospieszalski’s noise model) is considered. Since it is necessary to extract values of the model equivalent circuit for each bias point (which requires the me...

The High Electron Mobility Transistor (HEMT) is a small geometry hetero-junction device that exploits the high electron mobility in an undoped region to achieve high speed operation. Hetero-junction is used to create a narrow undoped electron well which forms the channel for current flow. The electron mobility in the channel is found to be maximum due to the adequate presence of Indium quantity...