نتایج جستجو برای: layers thicknesses

تعداد نتایج: 110505  

2011
J. W. Berenschot M Elwenspoek

Ddferent r f-sputtered borosdlcate glass films are characterized Layers sputtered m 100% AI and annealed m Nz at 550 “C for 3 5 h are found to be best applicable as protection layers m amsotropx etchmg of SI m KOH solutions and as bondmg layers m s&on mlcromachmmg For m SUB mspection of the progress of the dxonto-&con anodlc bondmg process usmg sputtered glass as mtermedlate layer, an Infrared ...

2012
Jakub Sirc Sarka Kubinova Radka Hobzova Denisa Stranska Petr Kozlik Zuzana Bosakova Dana Marekova Vladimir Holan Eva Sykova Jiri Michalek

Polyvinyl alcohol nanofibers incorporating the wide spectrum antibiotic gentamicin were prepared by Nanospider™ needleless technology. A polyvinyl alcohol layer, serving as a drug reservoir, was covered from both sides by polyurethane layers of various thicknesses. The multilayered structure of the nanofibers was observed using scanning electron microscopy, the porosity was characterized by mer...

Journal: :Nanotechnology 2011
M M Benameur B Radisavljevic J S Héron S Sahoo H Berger A Kis

Dichalcogenides with the common formula MX(2) are layered materials with electrical properties that range from semiconducting to superconducting. Here, we describe optimal imaging conditions for the optical detection of ultrathin, two-dimensional dichalcogenide nanocrystals containing single, double and triple layers of MoS(2), WSe(2) and NbSe(2). A simple optical model is used to calculate the...

2013
J. Ibáñez R. Cuscó S. Hernández L. Artús Mervyn Roy

We show that Raman scattering is a sensitive technique for probing the degree of Ga intermixing in In Ga As/GaAs self-assembled quantum dots QDs . The shifts of the QD phonon frequency that we observe are explained by the modification of the strain due to Ga incorporation into the QDs from the GaAs matrix during growth. Using an elastic continuum model, we estimate the average In content of the...

2009
Ruxandra M Costescu Christoph Deneke Dominic J Thurmer Oliver G Schmidt

The effect of illumination on the hydrofluoric acid etching of AlAs sacrificial layers with systematically varied thicknesses in order to release and roll up InGaAs/GaAs bilayers was studied. For thicknesses of AlAs below 10 nm, there were two etching regimes for the area under illumination: one at low illumination intensities, in which the etching and releasing proceeds as expected and one at ...

2004
David J. Cappelleri Mary I. Frecker

1. Abstract A new integrated grasping tool for minimally invasive surgery has been designed consisting of two piezoelectric bimorph actuators. To improve the force and deflection performance of the bimorphs, a segmented design with varying piezoelectric layer thicknesses is proposed, and an optimization procedure developed for sizing the section thicknesses. Design of experiments and response s...

2007
Janet C. Marshall P. Thomas Vernier

This paper presents a combined physical and electrical post-fabrication method for determining the thicknesses of the various layers in a commercial 1.5 μm complementary-metal-oxide-semiconductor (CMOS) foundry process available through MOSIS. Forty-two thickness values are obtained from physical step-height measurements performed on thickness test structures and from electrical measurements of...

2016
F. Villar J. Escarré

We study the structural and electrical properties of intrinsic layers growth close to the transition between amorphous silicon (a-Si:H) and nanocrystalline silicon (nc-Si:H) deposited on glass and PEN without intentional heating. These samples showed different behaviour in Raman shift and XRD spectra when compared with that of samples deposited at 200oC. Electrical properties of these films als...

Journal: :Asymptotic Analysis 2010
Isabelle Gruais Dan Polisevski

Abstract. The present paper deals with the homogenization of the heat conduction which takes place in a binary three-dimensional medium consisting of an ambiental phase having conductivity of unity order and a rectangular honeycomb structure formed by a set of thin layers crossing orthogonally and periodically. We consider the case when the conductivity of the thin layers is in inverse proporti...

2008
Gerd Bergmann

A strong electron-phonon interaction in a metal increases the electron density of states in the vicinity of the Fermi energy dramatically. This phenomenon is called electron-phonon mass enhancement. In this paper the question is investigated whether the mass enhancement can be manipulated in multi-layers of two metals with strong and weak electron-phonon interaction. A rich behavior is observed...

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