An H⁺-ion sensor based on a gated lateral bipolar junction transistor (BJT) pair that can operate without the classical reference electrode is proposed. The device is a special type of ion-sensitive field-effect transistor (ISFET). Classical ISFETs have the advantage of miniaturization, but  they are difficult to fabricate by a single fabrication process because of the bulky and brittle referen...

In this paper it has been demonstrated that a shielded channel made by varying the side gate length in silicon-on-nothing junctionless transistor not only improves short effect but also improve performance of CMOS circuits device. The proposed device dual stack silicon on nothing (SCDGSSONJLT) drain induced barrier lowering (DIBL), cut-off frequency and subthreshold slope are improved 20%, 39% ...

Submit Manuscript | http://medcraveonline.com Abbreviations: SPR: Surface plasmon resonance; ISFET: Ion Sensitive Field Effect Transistor; EnFET: Enzyme Field Effect Transistor; μTAS: Micro Total Analysis System; HCMV: Human Cytomegalovirus; ELISA: Enzyme-Linked Immunosorbent Assay; CNC: Computer Numerical Control; CAD: Computer Assisted Design; BSA: Bovine Serum Albumin; HPAb: Human Polyclonal...

We propose and demonstrate the operation of a monolithic field-effect-transistor-amplified magnetic field sensor device, in which a tunnel-magnetoresistive ~TMR! material is incorporated within the gate of a Si metal–oxide–semiconductor–field-effect transistor. A fixed voltage is applied across the TMR layer, which leads charge to build up within the gate. Applying or changing an external magne...