The sputtering yield of liquid tin due to heavy-ion bombardment has been found to have significantly reduced dependence on the sample temperature than that of light-ion bombardment. These results, combined with previous light-ion data, show that the mechanisms that increase the sputtering yield of materials under ion irradiation are diminished or surpassed by the effects of heavy-ion bombardmen...

The erosion of frozen SO 2 due to bombardment by both light and heavy ions (He and F) was measured for bombarding energies of 0.08 to 1.3 MeV/amu. The number of SOp molecules ejected from the target per incident ion (i.e.• the sputtering yield) was 50 for 1.5 MeV He ions and ?300 for 6 MeV F ions. Ion bombardment followed by heating produced an oxygen/sulfur residue which was much more stable a...

The influence of the ion–atom potential on sputtering parameters calculated with molecular dynamics simulations was last investigated in detail by Harrison in 1980 [J. Appl. Phys. 52 (1981) 1499]. Harrison concluded that except for total yields, layer yields, yields from different crystal orientations and atom per single ion (ASI) distributions, most sputtering properties were relatively insens...

We present a self-organized method based on defocused ion beam sputtering for nanostructuring glass substrates which feature antireflective and light trapping effects. By irradiating the substrate, capped with a thin gold (Au) film, a self-organized Au nanowire stencil mask is firstly created. The morphology of the mask is then transferred to the glass surface by further irradiating the substra...

In this presentation we show results of beam profile measurements by a slit-Faraday cup and a wire scanner. Argon 8+ beams were generated in a new liquid heliumfree superconducting electron cyclotron resonance ion source (ECRIS). The ECRIS, named SMASHI, was successfully developed at the National Fusion Research Institute in 2014, and in the future it will be dedicated for highly charged ions m...

Atomic mixing and preferential sputtering impose a depth resolution limit on the use of sputter sectioning to measure the composition of metal-semiconductor interfaces. Experimental evidence obtained with the Pt-Si system is used to .demonstrate ion-induced atomic mixing and then its effect on sputter etching and depth profiling. Starting with discrete layer structures, a relatively low ion dos...

The lithium sputtering yield from lithium and tin-lithium surfaces in the liquid state under bombardment by low-energy, singly charged particles as a function of target temperature is measured by using the Ion-surface Interaction Experiment facility. Total erosion exceeds that expected from conventional collisional sputtering after accounting for lithium evaporation for temperatures between 200...